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GaN-based Schottky diode and preparation method thereof

A Schottky diode, GaN-based technology, applied in diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of limited improvement of field plate technology withstand voltage, device design and process difficulties, etc.

Pending Publication Date: 2020-10-30
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, field plate technology has limited improvement in withstand voltage; field-limited ring technology can meet the withstand voltage requirement, but it is too sensitive to ring spacing, making device design and process difficult

Method used

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  • GaN-based Schottky diode and preparation method thereof
  • GaN-based Schottky diode and preparation method thereof
  • GaN-based Schottky diode and preparation method thereof

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preparation example Construction

[0059] The present invention also provides a preparation method of the gallium nitride-based Schottky diode, including:

[0060] providing a substrate 2, and forming an n-type gallium nitride layer 3 on the substrate 2;

[0061] Forming a gallium oxide insulating layer 5 at the edge of both ends of the n-type gallium nitride layer 3 facing away from the substrate 2;

[0062] Forming a Schottky metal electrode 4 on the side of the n-type gallium nitride layer 3 away from the substrate 2 and at least partially covering the gallium oxide insulating layer 5;

[0063] An ohmic contact electrode 1 is formed on the side of the substrate 2 away from the n-type gallium nitride layer 3 .

[0064] As an optional embodiment of the present invention, forming the n-type gallium nitride layer 3 on the substrate 2 includes:

[0065] A first n-type gallium nitride layer 31 and a second n-type gallium nitride layer 32 are sequentially formed on the substrate 2, and the doping concentration of...

Embodiment 1

[0075] This embodiment provides a method for preparing a GaN-based Schottky diode, the steps are as follows:

[0076] Step S1, prepare a substrate 2 (n-type GaN substrate polished on both sides), and sequentially grow a 2 μm first n-type gallium nitride layer 31 (n+ Type Si-doped GaN layer with a doping concentration of 2×10 18 cm -3 ) and the second n-type gallium nitride layer 32 of 8 μm (n-type Si-doped gallium nitride layer, the doping concentration is 6×10 15 cm -3 ), hydrosilane is used as Si dopant material, and the device structure that step S1 obtains is as image 3 shown;

[0077] In step S2, uniformly apply a layer of photoresist on the upper surface of the second n-type gallium nitride layer 32 to form a mask layer 6, and the device structure obtained in step S2 is as follows Figure 4 shown;

[0078] Step S3, remove the photoresist at both ends of the mask layer 6 by exposure and development, and form a gap at both ends of the mask layer 6, the gap exposes the...

Embodiment 2

[0087] This embodiment provides a method for preparing a GaN-based Schottky diode, the steps are as follows:

[0088] Step S1, prepare a substrate 2 (sapphire substrate), and sequentially grow a 5 μm first n-type GaN layer 31 (n+-type Si-doped nitride layer) on the substrate 2 by using a hydride vapor phase epitaxy (HVPE) process. Gallium layer, the doping concentration is 3×10 18 cm -3 ) and a second n-type gallium nitride layer 32 of 10 μm (n-type Si-doped gallium nitride layer, the doping concentration is 8×10 15 cm -3 ), hydrosilane is used as Si dopant material, and the device structure that step S1 obtains is as image 3 shown;

[0089] In step S2, uniformly apply a layer of photoresist on the upper surface of the second n-type gallium nitride layer 32 to form a mask layer 6, and the device structure obtained in step S2 is as follows Figure 4 shown;

[0090] Step S3, remove the photoresist at both ends of the mask layer 6 by exposure and development, and form a ga...

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Abstract

The invention provides a GaN(gallium nitride)-based Schottky diode and a preparation method thereof. The gallium nitride-based Schottky diode comprises an ohmic contact electrode, a substrate, an n-type gallium nitride layer and a Schottky metal electrode which are sequentially stacked, and further comprises gallium oxide insulating layers which are arranged at the edges of the two end parts of one side, deviating from the substrate, of the n-type gallium nitride layer and are at least partially covered by the Schottky metal electrode. The GaN-based Schottky diode device provided by the invention is simple in structure; and the gallium oxide has a good insulation isolation effect, so that the problem of barrier edge electric field concentration is effectively relieved, the capability of preventing breakdown and electric leakage is obviously improved, the actual breakdown voltage of the device is obviously improved, the problem of device breakdown caused by over-high local electric field is avoided, and the breakdown performance of the device is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a gallium nitride-based Schottky diode and a preparation method thereof. Background technique [0002] Power semiconductor devices are widely used in the power electronics industry and are one of the basic components of electronic products. In the process of industrial electronic upgrading, they are getting more and more attention and application. Up to now, the first-generation semiconductor materials represented by Si are still mainly used in the field of power semiconductor devices. However, with the gradual development of power semiconductor devices in the direction of high voltage and high frequency, traditional silicon-based power semiconductor devices and their materials have approached the physical limit. , the future development space is very limited. Today's industry is focusing on the third-generation semiconductor materials represented by silicon carbide (SiC) an...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/872H01L29/0638H01L29/0611H01L29/0649H01L29/0653H01L29/66212
Inventor 刘新科罗江流王磊利健贺威林峰黎晓华朱德亮吕有明
Owner SHENZHEN UNIV
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