GaN-based Schottky diode and preparation method thereof
A Schottky diode, GaN-based technology, applied in diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of limited improvement of field plate technology withstand voltage, device design and process difficulties, etc.
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[0059] The present invention also provides a preparation method of the gallium nitride-based Schottky diode, including:
[0060] providing a substrate 2, and forming an n-type gallium nitride layer 3 on the substrate 2;
[0061] Forming a gallium oxide insulating layer 5 at the edge of both ends of the n-type gallium nitride layer 3 facing away from the substrate 2;
[0062] Forming a Schottky metal electrode 4 on the side of the n-type gallium nitride layer 3 away from the substrate 2 and at least partially covering the gallium oxide insulating layer 5;
[0063] An ohmic contact electrode 1 is formed on the side of the substrate 2 away from the n-type gallium nitride layer 3 .
[0064] As an optional embodiment of the present invention, forming the n-type gallium nitride layer 3 on the substrate 2 includes:
[0065] A first n-type gallium nitride layer 31 and a second n-type gallium nitride layer 32 are sequentially formed on the substrate 2, and the doping concentration of...
Embodiment 1
[0075] This embodiment provides a method for preparing a GaN-based Schottky diode, the steps are as follows:
[0076] Step S1, prepare a substrate 2 (n-type GaN substrate polished on both sides), and sequentially grow a 2 μm first n-type gallium nitride layer 31 (n+ Type Si-doped GaN layer with a doping concentration of 2×10 18 cm -3 ) and the second n-type gallium nitride layer 32 of 8 μm (n-type Si-doped gallium nitride layer, the doping concentration is 6×10 15 cm -3 ), hydrosilane is used as Si dopant material, and the device structure that step S1 obtains is as image 3 shown;
[0077] In step S2, uniformly apply a layer of photoresist on the upper surface of the second n-type gallium nitride layer 32 to form a mask layer 6, and the device structure obtained in step S2 is as follows Figure 4 shown;
[0078] Step S3, remove the photoresist at both ends of the mask layer 6 by exposure and development, and form a gap at both ends of the mask layer 6, the gap exposes the...
Embodiment 2
[0087] This embodiment provides a method for preparing a GaN-based Schottky diode, the steps are as follows:
[0088] Step S1, prepare a substrate 2 (sapphire substrate), and sequentially grow a 5 μm first n-type GaN layer 31 (n+-type Si-doped nitride layer) on the substrate 2 by using a hydride vapor phase epitaxy (HVPE) process. Gallium layer, the doping concentration is 3×10 18 cm -3 ) and a second n-type gallium nitride layer 32 of 10 μm (n-type Si-doped gallium nitride layer, the doping concentration is 8×10 15 cm -3 ), hydrosilane is used as Si dopant material, and the device structure that step S1 obtains is as image 3 shown;
[0089] In step S2, uniformly apply a layer of photoresist on the upper surface of the second n-type gallium nitride layer 32 to form a mask layer 6, and the device structure obtained in step S2 is as follows Figure 4 shown;
[0090] Step S3, remove the photoresist at both ends of the mask layer 6 by exposure and development, and form a ga...
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