A high-quality method for growing large-scale silicon carbide crystals

A technology of crystal growth and silicon carbide, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of seed crystal ablation, plane hexagonal cavity, etc., to ensure full utilization, avoid seed crystal ablation, quality high effect

Active Publication Date: 2020-09-25
BEIJING TIANKE HEDA SEMICON CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problems of planar hexagonal voids caused by seed crystal ablation in the early stage of growth, the present invention provides a high-quality silicon carbide crystal growth method

Method used

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  • A high-quality method for growing large-scale silicon carbide crystals
  • A high-quality method for growing large-scale silicon carbide crystals
  • A high-quality method for growing large-scale silicon carbide crystals

Examples

Experimental program
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Effect test

example 1

[0032]A piece of 4H-SiC seed crystal is used, and the C surface is used as the crystal growth surface, and it is bonded to the graphite crucible cover. Fill the bottom of the crucible with sufficient SiC powder raw materials, then place the crucible cover with the seed crystal on the upper part of the crucible, and put it into the single crystal growth furnace after assembly. Push the crucible up by 20mm at a speed of 8mm / h, vacuumize the single crystal furnace to a pressure of less than 10Pa, and perform the following processes in sequence: (1) Inflate the growth furnace with argon and nitrogen mixture until the pressure reaches 30kPa, Keep the pressure constant, use intermediate frequency induction heating to raise the temperature, set the temperature of the raw material at 2200-2300°C, keep the temperature for 3 hours after reaching the temperature, and then keep the temperature in the furnace constant; (2) Through the growth furnace pressure control system, the pressure De...

example 2

[0034] A piece of 4H-SiC seed crystal is used, and the C surface is used as the crystal growth surface, and it is bonded to the graphite crucible cover. Fill the bottom of the crucible with sufficient SiC powder raw materials, then place the crucible cover with the seed crystal on the upper part of the crucible, and put it into the single crystal growth furnace after assembly. Push the crucible up 30mm at a speed of 10mm / h, vacuumize the single crystal furnace to a pressure of less than 10Pa, and perform the following processes in sequence: (1) Inflate the growth furnace with a mixture of argon and nitrogen until the pressure reaches 40kPa, Keep the pressure constant, use intermediate frequency induction heating to raise the temperature, set the temperature of the raw material at 2100-2200°C, keep the temperature for 5 hours after reaching the temperature, and then keep the temperature in the furnace constant; (2) Through the growth furnace pressure control system, the pressure...

example 3

[0036] A piece of 4H-SiC seed crystal is used, and the C surface is used as the crystal growth surface, and it is bonded to the graphite crucible cover. Fill the bottom of the crucible with sufficient SiC powder raw materials, then place the crucible cover with the seed crystal on the upper part of the crucible, and put it into the single crystal growth furnace after assembly. Push the crucible up by 40mm at a speed of 12mm / h, vacuumize the single crystal furnace to a pressure of less than 10Pa, and perform the following processes in sequence: (1) Inflate the growth furnace with argon and nitrogen mixture until the pressure reaches 60kPa, Keep the pressure constant, use intermediate frequency induction heating to raise the temperature, set the temperature of the raw material at 2200-2300°C, keep the temperature for 6 hours after reaching the temperature, and then keep the temperature in the furnace constant; (2) Through the growth furnace pressure control system, the pressure ...

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Abstract

The invention provides a growth method of a high-quality and large-size silicon carbide (SiC) crystal. The growth method aims to improve the quality of the grown SiC crystal and eliminate a plane hexagonal cavity defect. The growth method comprises the following steps: a crucible loaded with a SiC raw material and a seed crystal is placed in a single-crystal growth furnace, the quick upward-pushing distance range of the crucible is 5-50 mm, the seed crystal gets away from a high temperature area, the crucible slowly descends after reaching certain temperature and pressure conditions, the descending distance is consistent with the upward-pushing distance of the crucible, then under the certain temperature and pressure conditions, the SiC raw material is sublimated and crystallized on the seed crystal, the crystal is cooled, and the SiC single crystal is obtained. The growth method has the advantages that in the initial stage of crystal growth, the seed crystal gets away from the high temperature area, seed crystal ablation caused by the high temperature is eliminated, and thus the plane hexagonal cavity defect is eliminated; and meanwhile full utilization of the SiC raw material isguaranteed, and the high-quality and large-size SiC crystal is obtained.

Description

technical field [0001] The invention belongs to the field of silicon carbide crystal growth, and in particular relates to a high-quality large-size silicon carbide crystal growth method. Background technique [0002] As a third-generation semiconductor material, silicon carbide has excellent physical and chemical properties, and has a wide range of applications in high-end optoelectronics, high-power and microwave radio frequency fields. [0003] At present, the most mature and effective way to grow silicon carbide crystals is the physical vapor transport method (Journal of crystal growth 43 (1978) 209-212). The basic principle of the physical vapor transport method is: place the silicon carbide raw material in a crucible, The seed crystal is fixed on the top of the upper cover of the crucible, and the raw material is sublimated under high temperature and low pressure. The sublimated gas is driven by the temperature gradient provided by the crystal growth thermal field for m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 刘春俊姚静彭同华赵宁王波杨建
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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