Power semiconductor device with rapid reverse recovery characteristic and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductors and particularly discloses a power semiconductor device with a rapid reverse recovery characteristic, which comprises drain metal. A first conductive type silicon substrate is arranged on the drain metal; a first conductive type silicon epitaxial layer is arranged on the first conductive type silicon substrate; a trench is formed in the first conductive type silicon epitaxial layer; a field oxide layer, a shielding gate, a gate and a virtual gate are arranged in the trench; the shielding gate is surrounded by the field oxide layer;the gate and the virtual gate are located at the top of the trench; a first gate oxide layer is arranged between the gate and the first conductive type silicon epitaxial layer; a second gate oxide layer is arranged between the virtual gate and the first conductive type silicon epitaxial layer; and the thickness of the second gate oxide layer is smaller than that of the first gate oxide layer. Theinvention further discloses a manufacturing method for the power semiconductor device with the rapid reverse recovery characteristic. The power semiconductor device with the rapid reverse recovery characteristic provided by the invention can obviously inhibit the peak value of the reverse recovery current.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power semiconductor device with fast reverse recovery characteristics and a manufacturing method of the power semiconductor device with fast reverse recovery characteristics. Background technique [0002] Power semiconductor devices are the intrinsic driving force of continuously developing power-electronic systems, especially in terms of energy saving, dynamic control, noise reduction, etc. In the past three decades, power devices have achieved leapfrog development, especially power metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistor, MOSFET). The on-resistance must be effectively reduced. On the premise of ensuring the breakdown voltage, in order to obtain a larger on-current, the concept of "super junction" was proposed in the early 1990s, using alternate P columns and N columns to replace the traditional The N-type d...

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Problems solved by technology

[0003] The invention provides a power semiconductor device with fast reverse recovery characteristics and a manufacturing method of the power semiconductor device with fast reverse recovery characteristics, which solves the problem of large reverse recovery peak current in the related art

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