Quantum dot light-emitting diode and its preparation method
A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as electron and hole injection imbalance, to promote transport, improve mobility, and ease electron injection Much higher than the effect of hole injection
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[0023] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, including the following steps:
[0024] S01: Provide bulk heterojunction materials;
[0025]S02: Depositing the bulk heterojunction material on the anode or quantum dot light-emitting layer to obtain a bulk heterojunction transport layer.
[0026] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention has a simple process. A bulk heterojunction transport layer is deposited between the anode and the quantum dot light-emitting layer, and the bulk heterojunction transport layer can improve the hole injection efficiency. , which is beneficial to balance the electrons and holes in the quantum dot light-emitting layer in the device, thereby alleviating the problem that electron injection is much higher than hole injection.
[0027] Further, in step S01, the bulk heterojunction material ...
Embodiment 1
[0039] A QLED device, its structure from bottom to top is as follows:
[0040] Glass substrate / ITO / PEDOT:PSS / TFB / C 60 @Rubrene / CdSe quantum dot layer / ZnO / Al.
[0041] Its preparation method is as follows:
[0042] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;
[0043] b. Spin-coat a TFB layer on the PEDOT:PSS layer;
[0044] c. Put C first 60 @Rubrene was blended and dissolved in chlorobenzene at 6:4 to form a mixed solution, and then the mixed solution was spin-coated on the TFB layer at a spin-coating rate of 2000rpm; then a layer of CdSe quantum dots was spin-coated at a spin-coating rate of 3000rpm to emit light layer;
[0045] d. Next, spin-coat a layer of ZnO on the quantum dot composite luminescent layer;
[0046] e. Finally, a layer of Al is evaporated on the ZnO to obtain a quantum dot light-emitting diode.
Embodiment 2
[0048] A QLED device, its structure from bottom to top is as follows:
[0049] Glass substrate / ITO / PEDOT:PSS / TFB / C 60 @Rubrene / CdSe quantum dot layer / ZnO / Al.
[0050] Its preparation method is as follows:
[0051] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;
[0052] b. Spin-coat a TFB layer on the PEDOT:PSS layer;
[0053] c. Put C first 60 @Rubrene was blended and dissolved in chlorobenzene at 7:2 to form a mixed solution, and then the mixed solution was spin-coated on the TFB layer at a spin-coating rate of 2000rpm; then a layer of CdSe quantum dots was spin-coated at a spin-coating rate of 3000rpm to emit light layer;
[0054] d. Next, spin-coat a layer of ZnO on the quantum dot composite luminescent layer;
[0055] e. Finally, a layer of Al is evaporated on the ZnO to obtain a quantum dot light-emitting diode.
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