Solid-state imaging element, imaging device, and solid-state imaging element control method
A solid-state imaging element and one-party technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem of increasing the installation area and achieve the effect of improving image quality
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no. 1 Embodiment approach ＞
[0058] [Configuration example of imaging device]
[0059] figure 1 It is a block diagram showing a configuration example of the imaging device 100 according to the first embodiment of the present invention. This imaging device 100 is a device for capturing image data, and includes an optical unit 110 , a solid-state imaging device 200 , and a DSP (Digital Signal Processing) circuit 120 . Furthermore, the imaging device 100 includes a display unit 130 , an operation unit 140 , a bus 150 , a frame memory 160 , a storage unit 170 , and a power supply unit 180 . As the imaging device 100 , for example, a smartphone having an imaging function, a personal computer, an on-vehicle camera, etc. are assumed in addition to a digital camera such as a digital still camera.
[0060] The optical unit 110 condenses light from a subject and guides it to the solid-state imaging device 200 . The solid-state imaging device 200 generates image data by photoelectric conversion in synchronization...
no. 2 Embodiment approach ＞
[0138] In the above-mentioned first embodiment, the pixels 300 are arranged on a single semiconductor chip, but as the number of pixels increases, there is a possibility that the circuit scale of the semiconductor chip will increase. The solid-state imaging device 200 of the second embodiment is different from the first embodiment in that the circuit in the pixel 300 is distributed and arranged in a plurality of stacked chips.
[0139] Figure 11 It is a diagram showing an example of the stacked structure of the solid-state imaging device 200 according to the first embodiment of the present invention. This solid-state imaging device 200 includes a circuit chip 202 and a light receiving chip 201 laminated on the circuit chip 202 . These chips are electrically connected via connection portions such as via holes. In addition, connection can also be made by Cu—Cu bonding or bumps other than via holes.
[0140] Figure 12 It is a circuit diagram showing a configuration example ...
no. 3 Embodiment approach ＞
[0153] In the first embodiment described above, the pixel signals of all the pixels are read out in synchronization with the vertical synchronization signal VSYNC. However, as the number of pixels increases, there is a possibility that the circuit scale increases and the power consumption increases. The solid-state imaging device 200 of the third embodiment is different from the first embodiment in that only the pixel signal of the pixel in which an address event has occurred is read out.
[0154] Figure 14It is a timing chart showing an example of the driving method of the pixel 300 according to the third embodiment of the present invention. The control circuit 215 supplies a detection signal of an address event to the drive circuit 212 . The vertical synchronization signal VSYNC is not input to the solid-state imaging device 200 . Also, the drive circuit 212 drives only the pixel in which the address event has occurred among all the pixels to generate a pixel signal. The...
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