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Schottky diode and preparation method thereof

A Schottky diode and Schottky metal technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty in obtaining Schottky barrier height and single characteristics

Pending Publication Date: 2019-12-24
GLOBAL POWER TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with this result is that, The size of can only be determined according to the work function of the single-layer metal, which has single characteristics and limitations, and it is difficult to obtain the ideal Schottky barrier height

Method used

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  • Schottky diode and preparation method thereof
  • Schottky diode and preparation method thereof
  • Schottky diode and preparation method thereof

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specific Embodiment approach 1

[0024] Such as figure 2 As shown in , the Schottky diode of the present invention includes an N+ substrate 201, an N- epitaxial layer 202, p+ implantation regions 205 arranged at equal intervals in the N-epitaxial layer 202, and a Schottky metal unit 203 (including the first Schottky metal layer 203 - 1 and second Schottky metal layer 203 - 2 ), anode metal 204 and cathode metal 206 . The first Schottky metal 203-1 is in direct contact with the upper surface of the silicon carbide epitaxial layer 202 and the p+ implantation region 205, the second Schottky metal 203-2 is directly deposited on the surface of the first Schottky metal 203-1, After the deposition of 203-1 and 203-2 is completed, rapid annealing is performed at the same time, the temperature range is 400-600°C, and the time is 5 minutes. After the annealing is completed, the first Schottky metal 203-1 (such as Al metal) and the second Schottky metal 203-2 (such as Mo metal) undergo an alloying reaction with silico...

specific Embodiment approach 2

[0030] Such as image 3 As shown, on the basis of Embodiment 1, a third metal layer 203-3 and a fourth metal layer 203-4 are added;

[0031] Wherein, the N- epitaxial layer 202 includes at least two layers of Schottky contact metals with different work functions, and the first metal layer 203-1 directly in contact with the silicon carbide epitaxial layer is a metal with a low work function. It is the second metal layer 203-2 whose work function is higher than that of the first metal layer 203-1, wherein the odd-numbered layers are metals with the same type of low work function as the first metal layer 203-1, such as Al, Ti, etc., and the even-numbered layers are It is the same kind of high work function metal as the second metal layer 203-2, such as Mo, Au and the like. No matter how many layers of metal the Schottky metal is composed of, its total thickness remains constant at a specific value, preferably 200 nm. All the metal layers above form Schottky junctions with the s...

specific Embodiment approach 3

[0034] The preparation method of Schottky diode of the present invention specifically comprises the following steps:

[0035] Step 1, forming an N- epitaxial layer 202 on the N+ substrate 201;

[0036] Step 2, making a p+ implantation region 205 on the N- epitaxial layer 202;

[0037] Step 3. Deposit the first metal layer in the Schottky metal unit 203 to the N- epitaxial layer 202 by sputtering, and then deposit the second metal layer on the first metal layer, and so on, to complete the deposition , and then form a Schottky junction by annealing, the Schottky metal layer unit 203 includes multiple layers of Schottky metal layers (203-1, 203-2, 203-3, 203-4), and two adjacent The metal work functions of the Schottky metal layers are different;

[0038] Step 4. Precipitating cathode metal 206 and anode metal 204 .

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Abstract

The invention provides a Schottky diode. The Schottky diode comprises an N+ substrate, an N- epitaxial layer on the N+ substrate, and a Schottky metal layer unit which covers the surface of the N- epitaxial layer and comprises a number of Schottky metal layers, wherein the metals of two adjacent Schottky metal layers are different. The Schottky diode further comprises an anode metal on the Schottky metal layer unit, and a cathode metal on the other surface of the N+ substrate. The invention further provides a preparation method of the Schottky diode. A Schottky barrier can be flexibly adjustedto acquire ideal positive voltage drop and acceptable reverse leakage current.

Description

technical field [0001] The invention relates to a Schottky diode and a preparation method thereof. Background technique [0002] At present, traditional power electronic devices based on silicon materials are increasingly limited by their physical characteristics, which seriously restricts the performance improvement and development of devices. As a representative material of the third-generation semiconductor, silicon carbide material has the advantages of high band gap, high breakdown electric field, and high thermal conductivity. Silicon carbide Schottky diodes have the advantages of low forward voltage drop and almost no reverse recovery current, such as figure 1 As shown, it is a diode structure in the prior art, wherein the Schottky barrier formed between the Schottky metal 104 and the epitaxial layer 102 directly affects the forward voltage drop and reverse characteristics of the Schottky diode. Schottky barrier is the metal work function qΦ m and SiC electron af...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/417H01L29/47H01L29/872H01L21/329H01L21/04
CPCH01L29/872H01L29/6606H01L29/0684H01L29/47H01L29/417H01L21/0495
Inventor 宋安英张瑜洁刘刚单体伟陈彤
Owner GLOBAL POWER TECH CO LTD
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