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Preparation method of novel quartz crucible

A quartz crucible, a new type of technology, is applied in the direction of chemical instruments and methods, self-melting liquid pulling method, crystal growth, etc. It can solve the problems of easy curling and short service life, so as to improve the strength, improve the service life, and adapt high universal effect

Inactive Publication Date: 2019-12-31
内蒙古中环晶体材料有限公司
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  • Application Information

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Problems solved by technology

[0005] The problem to be solved by the present invention is to provide a preparation method of a new type of quartz crucible, which is suitable for drawing P-type and N-type single crystal silicon rods, and solves the problem of curling on the upper end of the quartz crucible in the prior art, and the long service life. short technical question

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  • Preparation method of novel quartz crucible
  • Preparation method of novel quartz crucible
  • Preparation method of novel quartz crucible

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Embodiment Construction

[0022] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0023] The present invention proposes a preparation method of a novel quartz crucible, such as figure 1 As shown, it includes a straight part and a curved part arranged under the straight part. The curved part is a circular arc structure protruding downwards. The curved part is arranged symmetrically. There is a connecting part between the straight part and the curved part. The connecting part It is also an arc-shaped structure, the radius r of the connecting part is smaller than the radius R of the curved part, and the two ends of the connecting part are connected with the straight part and the curved part in an integrated tangent line, and the thickness of the straight part, the connecting part and the curved part are the same. Further, an inner coating 10, a transparent layer 20, an air bubble layer 30 and an outer coating 40 are sequentia...

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Abstract

The invention provides a preparation method of a novel quartz crucible. The method includes: preparing a blank crucible, which sequentially comprises a transparent layer and a bubble layer from the inside out; coating a layer of inner coating on one side of the transparent layer far from the bubble layer; and coating a layer of outer coating on one side of the bubble layer far from the transparentlayer. The preparation method of the novel quartz crucible designed by the invention can prevent deformation of an opening at the upper end of the quartz crucible, improve the strength of the quartzcrucible, and enhance the service life of the quartz crucible; at the same time, the service life of the tail part at a single crystal silicon rod prepared with the quartz crucible is improved, the crystallization rate of the single crystal silicon rod is good, and the conversion efficiency is high, and the quartz crucible is suitable for drawing of P-type and N-type single crystal silicon rods, and has high universality.

Description

technical field [0001] The invention belongs to the technical field of solar-grade Czochralski silicon single crystal furnaces, and in particular relates to a preparation method of a novel quartz crucible. Background technique [0002] Quartz crucible is the main consumable material for drawing monocrystalline silicon. A quartz crucible is required for each furnace of monocrystalline silicon produced. At present, the development of solar-grade monocrystalline silicon is mainly in the direction of large size, thin slices and high conversion efficiency. , while the quartz crucible is an important material to ensure the growth of single crystal silicon, the quality of the quartz crucible directly determines the quality and service life of single crystal silicon. [0003] During the melting process, the quartz crucible is affected by high temperature changes, and the upper part of the quartz crucible is prone to deformation, causing curling on the upper end of the quartz crucibl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10C30B29/06C04B35/14C04B35/64C04B41/85
CPCC04B35/14C04B35/64C04B41/501C04B41/85C04B2235/401C30B15/10C30B29/06
Inventor 吴树飞徐强高润飞王林谷守伟王建平周泽杨志赵国伟刘振宇王鑫刘学皇甫亚楠杨瑞峰郭志荣
Owner 内蒙古中环晶体材料有限公司