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Piezoresistive sensor and preparation method thereof

A sensor, piezoresistive technology, applied in the field of sensors, to achieve the effect of improving sensitivity, improving detection limit, and improving stability

Inactive Publication Date: 2019-12-31
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, with the gradual improvement of demanded precision, the sensitivity, detection and stability of piezoresistive sensors need to be further improved

Method used

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  • Piezoresistive sensor and preparation method thereof
  • Piezoresistive sensor and preparation method thereof
  • Piezoresistive sensor and preparation method thereof

Examples

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preparation example Construction

[0048] The MXene layer can be prepared by spraying or vapor deposition. The spraying method includes spraying the prepared MXene aqueous solution to cover the electrode layer 112, and the vapor deposition method includes deposition by chemical vapor deposition (CVD).

[0049] In some embodiments, the intermediate layer further includes: a silver nanomaterial layer, which is disposed between the MXene layer and the polyvinyl butyral layer. The material of the silver nanomaterial layer may be silver nanowires, which are prepared by known techniques in the prior art.

[0050] In some embodiments, the thickness of the MXene layer is between 200nm and 2mm, the thickness less than 2mm can maintain flexibility and local wearability, and the thickness greater than 200nm can ensure that it does not break.

[0051] A polyvinyl butyral (PVB) layer 114 of the present disclosure is disposed on the MXene layer 113 . The polyvinyl butyral (PVB) layer is a layer structure containing polyviny...

Embodiment 1

[0060] The preparation method of the flexible wearable piezoresistive sensor based on MXene / PVB of the present embodiment 1, the steps are as follows:

[0061] a. Design the size of the interdigitated electrode (a way of electrode layer) on the computer design software, and then use the method of laser ablation to prepare the conductive electrode, and use conductive adhesive tape or conductive silver paste to lead out two conductive lines. Fabricate interdigitated electrodes on pure PET with conductive ink;

[0062] b. Spray the prepared MXene aqueous solution onto the interdigitated copper electrode with a flexible substrate PET to form an MXene layer;

[0063] c. Then spray PVB ethanol solution to cover the MXene layer, forming a polyvinyl butyral layer on it;

[0064] d. Encapsulate the four layers (middle layer) of PET with flexible substrate, interdigitated copper electrode layer, MXene layer and PVB layer with polydimethylsiloxane, and dry them in an atmosphere of 50-70...

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Abstract

The invention provides a piezoresistive sensor, wherein the piezoresistive sensor comprises an intermediate layer; the intermediate layer comprises a substrate, an electrode layer, an MXene layer anda polyvinyl butyral layer; the electrode layer comprises a first electrode and a second electrode spaced from the first electrode, and is arranged on the substrate; the MXene layer covers the first electrode and the second electrode; and the polyvinyl butyral layer is arranged on the MXene layer. The piezoresistive sensor can be applied to a flexible wearable sensing device; and the sensitivity, the detection limit and the stability of the piezoresistive sensor are increased.

Description

technical field [0001] The present disclosure relates to a sensor, and further relates to a piezoresistive sensor and a preparation method of the piezoresistive sensor. Background technique [0002] Sensors can be used in many industrial fields. For example, flexible wearable piezoresistive sensors are a new type of pressure sensing devices, which can be used in soft robots, display electronic equipment, medical device monitoring, electronic skin and other fields. Currently reported pressure sensors generally include the following basic types or their combinations: pressure, strain, shear, and vibration. Changes in resistance are mainly caused by: changes in sensor geometry, changes in semiconductor bandgap, changes in contact resistance between two materials, changes in particle spacing in composite materials. The sensing mechanism is mainly based on pressure, capacitance, piezoelectric effect and light effect. A piezoresistive sensor is a sensor that converts the change ...

Claims

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Application Information

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IPC IPC(8): G01L1/22G01L9/04B82Y15/00B82Y30/00B82Y35/00
CPCB82Y15/00B82Y30/00B82Y35/00G01L1/22G01L9/04
Inventor 单光存覃儒展胡明俊
Owner BEIHANG UNIV
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