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Temperature compensation surface acoustic wave filter, preparation method thereof and application thereof

A temperature compensation and filter technology, applied in the field of microelectronics, can solve the problems of large SAWFQ value and large temperature coefficient, and achieve the effect of reducing Q value, stable performance, small Q value and low parasitic noise.

Pending Publication Date: 2020-01-03
BEIJING ZHONGXUN SIFANG SCI & TECH +1
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  • Abstract
  • Description
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Problems solved by technology

[0007] The purpose of the present invention is to overcome the described deficiencies of the prior art, provide a kind of temperature compensation surface acoustic wave filter and preparation method thereof, to solve the technical problem that the Q value that exists in existing SAWF is big or further exist the deficiencies such as large temperature coefficient

Method used

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  • Temperature compensation surface acoustic wave filter, preparation method thereof and application thereof
  • Temperature compensation surface acoustic wave filter, preparation method thereof and application thereof
  • Temperature compensation surface acoustic wave filter, preparation method thereof and application thereof

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preparation example Construction

[0042] Correspondingly, the embodiment of the present invention also provides a preparation method of the above-mentioned temperature-compensated surface acoustic wave filter. The preparation method of the surface acoustic wave filter combines figure 1 , the process flow of the preparation method of the surface acoustic wave filter is as follows Figure 8 As shown, it includes the following steps:

[0043] S01: preparing an IDT electrode 2 on a plane 11 of the piezoelectric substrate 1;

[0044] S02: Deposit the insulating medium layer 23 on the first boundary region A1 and the second boundary region A2 of the IDT electrode 2 .

[0045] Specifically, in the above step S01, the method for preparing the IDT electrode 2 on the piezoelectric substrate 1 can be prepared according to the existing method for preparing the IDT electrode. As long as it can be formed as figure 2 The "piston" structure shown in A is sufficient. In one embodiment, by controlling the process conditions...

Embodiment 11

[0078] This embodiment provides a surface acoustic wave filter and a preparation method thereof. The structure of the SAW filter is as follows Figure 1-Figure 2 As shown, the structure of the SAW filter is: piezoelectric substrate 1 / interdigital transducer electrode 2 . Wherein, the piezoelectric substrate 1 is LiTaO 3 , and its Euler angle (0, θ, 0) θ is 38°; the material of the IDT electrode 2 is copper, and its thickness is 0.05λ, and the IDT electrode 2 is such as figure 2 For the "piston" structure shown in A, the specific structure of the interdigital transducer electrode 2 is as described above. The second interdigitation refers to 3% of the total length of the bar electrode, and the material is tantalum pentoxide.

Embodiment 12

[0080] This embodiment provides a surface acoustic wave filter and a preparation method thereof. The structure of the SAW filter is as follows Figure 1-Figure 2 As shown, the structure of the SAW filter is: piezoelectric substrate 1 / interdigital transducer electrode 2 . Wherein, the piezoelectric substrate 1 is LiTaO 3 , and its Euler angle (0, θ, 0) θ is 38°; the material of the IDT electrode 2 is copper, and its thickness is 0.05λ, and the IDT electrode 2 is such as figure 2 The "piston" structure shown in A, the specific structure of the interdigital transducer electrode 2 is as described above, in order to save space, it will not be repeated here, wherein, the thickness of the insulating medium layer 23 is 1000 Angstroms, and the width is Accounting for 2% of the total length of the second interdigitated electrode, the material is tantalum pentoxide.

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Abstract

The invention discloses a temperature compensation surface acoustic wave filter, a preparation method and an application thereof. The temperature compensation surface acoustic wave filter comprises aninterdigital transducer electrode, wherein the interdigital transducer electrode comprises a first bus electrode and a second bus electrode; the first bus electrode comprises a plurality of first interdigital strip electrodes which are arranged at intervals, and the second bus electrode comprises a plurality of second interdigital strip electrodes which are arranged at intervals; in the directionparallel to the first bus electrode or the second bus electrode, a section of region from the tail end of the end part of the first interdigital strip electrode to the end of the first bus electrodeforms a first boundary region; a section of region from the tail end of the end part of the second interdigital strip electrode to the end of the second bus electrode forms a second boundary region; and an insulating dielectric layer is deposited on the first interdigital strip electrode and the second interdigital strip electrode in the first boundary region and the second boundary region.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a temperature-compensated surface acoustic wave filter and its preparation method and application. Background technique [0002] Surface acoustic waves refer to the propagation of sound waves on the surface of elastomers, and this wave is called elastic surface acoustic waves. Surface acoustic waves travel about 100,000 times slower than electromagnetic waves. SAW filters generally use piezoelectric materials such as quartz crystals and piezoelectric ceramics, and are a special filtering device made by utilizing their piezoelectric effect and the physical characteristics of surface acoustic wave propagation. The so-called piezoelectric effect is the phenomenon that when the crystal is subjected to mechanical action, an electric field proportional to the pressure will be generated. Crystals with piezoelectric effect, when subjected to electrical signals, wil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/64H03H3/10
CPCH03H9/6489H03H3/10
Inventor 卢翠刘绍侃张伟王玉龙
Owner BEIJING ZHONGXUN SIFANG SCI & TECH
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