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AIE (aggregation-induced emission) material-based fluorescent/phosphorescent mixed type white-light OLED and preparation method of fluorescent/phosphorescent mixed type white-light OLED

A hybrid, phosphorescence technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as low fluorescence quantum efficiency, device exciton quenching, and increased process difficulty, achieving broad application value, Simplified device structure and process, good spectral stability

Active Publication Date: 2020-01-07
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials are faced with the serious problem of fluorescence quenching caused by aggregation, which leads to their low fluorescence quantum efficiency in the undoped state, and the prepared devices have serious exciton quenching, and often show a high efficiency roll-off. Especially in short-wavelength blue light materials, the disadvantages are more obvious
In addition, the preparation process of traditional white OLEDs usually requires a complex doping process, which increases the difficulty of the process and greatly increases the manufacturing cost.

Method used

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  • AIE (aggregation-induced emission) material-based fluorescent/phosphorescent mixed type white-light OLED and preparation method of fluorescent/phosphorescent mixed type white-light OLED
  • AIE (aggregation-induced emission) material-based fluorescent/phosphorescent mixed type white-light OLED and preparation method of fluorescent/phosphorescent mixed type white-light OLED
  • AIE (aggregation-induced emission) material-based fluorescent/phosphorescent mixed type white-light OLED and preparation method of fluorescent/phosphorescent mixed type white-light OLED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A fluorescent / phosphorescent hybrid white light OLEDs (device W1) based on aggregation-induced light-emitting materials in this embodiment uses ITO as the anode, HAT-CN as the hole injection layer, TAPC as the hole transport layer, and TCTA as the electron blocking layer , using Ir(dmdppr-mp) 2 (divm) guest-doped TCTA host is a red light-emitting layer (guest doping concentration is 3% mass percent), CP-BP-PXZ is a green light-emitting layer, TCTA is a spacer layer, TPB-AC is a blue light-emitting layer, TmPyPB It is electron transport layer, LiF is electron injection layer, and metal Al is cathode. The device structure is as follows:

[0035] Device W1: ITO / HAT-CN(5nm) / TAPC(50nm) / TCTA(5nm) / TCTA:3wt%Ir(dmppr-mp) 2 (divm)(8nm) / CP-BP-PXZ(6nm) / TCTA(2nm) / TPB-AC(10nm) / TmPyPB(40nm) / LiF(1nm) / Al(120nm).

[0036] The preparation steps of device W1 are as follows:

[0037] (1) Ultrasonic cleaning of ITO glass with cleaning agent for 60 minutes, then ultrasonic cleaning of ITO...

Embodiment 2

[0053] A fluorescent / phosphorescent hybrid white light OLEDs (device W2) based on aggregation-induced light-emitting materials in this embodiment differs from Example 1 only in the thicknesses of the red light-emitting layer, the spacer layer and the green light-emitting layer, and the device structure as follows:

[0054] Device W2: ITO / HAT-CN(5nm) / TAPC(50nm) / TCTA(5nm) / TCTA:3wt%Ir(dmppr-mp) 2 (divm)(5nm) / CP-BP-PXZ(10nm) / TCTA(3nm) / TPB-AC(10nm) / TmPyPB(40nm) / LiF(1nm) / Al(120nm).

[0055] The electroluminescence spectra of the white light device W2 prepared in this example at different brightnesses are as follows: image 3 As shown, its current density-brightness-voltage characteristic curve is as follows Figure 4 As shown, its power efficiency-quantum efficiency-brightness characteristic curve is as follows Figure 5 shown.

[0056] The electroluminescence performance data of the white light devices W1 and W2 prepared in the above Examples 1 and 2 are shown in Table 1:

[0...

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Abstract

The invention belongs to the field of organic light emitting diodes and discloses an AIE (aggregation-induced emission) material-based fluorescent / phosphorescent mixed white-light OLED and a preparation method thereof. The light-emitting layer of the OLED is composed of a phosphorescent guest doped host red light-emitting layer, a non-doped AIE green light-emitting layer, a spacer layer and a non-doped AIE blue light-emitting layer which are sequentially distributed from the anode to the cathode of the OLED. The OLED is characterized in that the blue light emitting layer and the green light emitting layer are made of non-doped aggregation-induced emission (AIE) materials. According to the OLED and the preparation method thereof of the invention, a red phosphorescent molecule doped hole transport host is adopted as the red light-emitting layer. The fluorescent / phosphorescent mixed white-light OLED with high efficiency, low efficiency roll-off, a high color rendering index and good spectral stability is successfully prepared. The structure of the device is greatly simplified. The OLED has an important application value.

Description

technical field [0001] The invention belongs to the field of organic light-emitting diodes, in particular to a fluorescent / phosphorescent mixed white light OLEDs based on AIE materials and a preparation method thereof. Background technique [0002] Electroluminescence is a phenomenon in which substances such as semiconductors emit light under the action of an electric field. Light-emitting diodes developed using electroluminescence have been widely used in daily lighting systems and are an indispensable part of human production and life. In contrast, organic light-emitting diodes (Organic Light-Emitting Diodes, OLEDs) made of organic semiconductors are considered to be promising due to their advantages of thinness, flexibility, surface emission, no glare, no blue light hazard, and close to sunlight. The new generation of lighting sources has broad application prospects in home lighting, medical lighting, automotive lighting, museum lighting and other fields. [0003] The co...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/12H10K50/13H10K50/131H10K71/00
Inventor 马东阁徐增代岩峰孙倩乔现锋秦安军赵祖金唐本忠
Owner SOUTH CHINA UNIV OF TECH
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