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Inverted bottom-emitting organic light-emitting diode and preparation method thereof

A technology of light-emitting diodes and bottom emission, which is applied in the direction of organic semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. It can solve problems such as difficult operation and difficult evaporation, and achieve the effect of simplifying the device structure and process

Active Publication Date: 2017-09-01
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thin layer of metal has a certain absorption of light, and it is not easy to operate, and it is difficult to evaporate it.

Method used

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  • Inverted bottom-emitting organic light-emitting diode and preparation method thereof
  • Inverted bottom-emitting organic light-emitting diode and preparation method thereof
  • Inverted bottom-emitting organic light-emitting diode and preparation method thereof

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Embodiment 1

[0037] An inverted bottom-emitting organic light-emitting diode of this embodiment, its structural schematic diagram is as follows figure 1 Shown, its preparation method is as follows:

[0038] First, the ITO cathode 2 on the glass substrate 1 is photolithographically formed into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, dried with nitrogen, and placed in a vacuum oven for 30 minutes at 120 degrees Celsius, and then transferred to a vacuum coating system middle. When the vacuum of the vacuum coating system reaches 1~5×10 -4 Pa, sequentially vapor-deposit m-MTDATA / m-MTDATA:HAT-CN / HAT-CN organic heterojunction charge generation layer 3, Be(pp) on the ITO cathode 2 2 : Li 2 CO 3 The electron transport layer 4, Be(pp) 2 Hole / exciton blocking layer 5, green phosphorescent dye Ir(ppy) 2 (acac) doped in the electron transport material Be(pp) respectively 2 And the double light-emitting layer 6 of the hole transport material TCTA, the electron / excit...

Embodiment 2

[0041] An inverted bottom-emitting organic light-emitting diode of this embodiment, its structural schematic diagram is as follows figure 1 Shown, its preparation method is as follows:

[0042] First, the ITO cathode 2 on the glass substrate 1 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, dried with nitrogen, and placed in a vacuum oven for 30 minutes at 120 degrees Celsius, and then transferred to vacuum coating system. When the vacuum of the vacuum coating system reaches 1~5×10 -4 Pa, sequentially vapor-deposit m-MTDATA / m-MTDATA:HAT-CN / HAT-CN organic heterojunction charge generation layer 3, Be(pp) on the ITO cathode 2 2 : Li 2 CO 3 Electron transport layer 4, Be(pp) 2 The hole / exciton blocking layer 5, the red phosphorescent dye Ir(MDQ) 2 (acac) doped in the electron transport material NPB light-emitting layer 6, TAPC electron / exciton blocking layer 7, HAT-CN doped in the hole transport material TAPC hole transport layer 8,...

Embodiment 3

[0045] An inverted bottom-emitting organic light-emitting diode of this embodiment, its structural schematic diagram is as follows figure 1 Shown, its preparation method is as follows:

[0046] First, the ITO cathode 2 on the glass substrate 1 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, dried with nitrogen, and placed in a vacuum oven for 30 minutes at 120 degrees Celsius, and then transferred to vacuum coating system. When the vacuum of the vacuum coating system reaches 1~5×10 -4 Pa, on the ITO cathode 2 sequentially vapor-deposited m-MTDATA / m-MTDATA:HAT-CN / HAT-CN organic heterojunction charge generation layer 3, BmPyPB:Li 2 CO 3 The electron transport layer 4 of BmPyPB, the hole / exciton blocking layer 5 of BmPyPB, and the blue phosphorescent dye FIrpic are respectively doped in the bipolar transport material 26DCzPPy and the hole transport material TCTA double light-emitting layer 6, TAPC electron / exciton blocking layer 7, H...

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Abstract

The invention belonging to the technical field of the organic optoelectronic material discloses an inverted bottom-emitting organic light-emitting diode and a preparation method thereof. The inverted bottom-emitting organic light-emitting diode is composed of a substrate, a cathode, an organic heterojunction charge generation layer, an electron transport layer, a hole / exciton barrier layer, a phosphorescent dye doped light-emitting layer, an electron / exciton barrier layer, a hole transport layer, a hole injection layer and an anode that are connected in sequence. The organic heterojunction charge generation layer is a two-layer organic semiconductor heterojunction formed by a p type organic semiconductor and an n type organic semiconductor or a hybrid bulk heterojunction formed by mixing of two kinds of organic semiconductors. According to the invention, the organic semiconductor heterojunction is used as the electron injection layer to solve a problem of electron injection of the inverted bottom-emitting OLED, so that the prepared inverted bottom-emitting organic light-emitting diode has an advantage of high efficiency; and the device structure and the process are simplified.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric materials, and in particular relates to an inverted bottom-emitting organic light-emitting diode and a preparation method thereof. Background technique [0002] Organic light-emitting diode (Organic Light-emitting Diode OLED) is the most promising flat panel display and lighting technology, and has been widely researched. Compared with inorganic LEDs, OLED has a wide range of material selection, low driving voltage, high luminous brightness and efficiency, fast response speed, wide luminous viewing angle, ultra-thin, light weight, and active luminescence, which can be fabricated on flexible substrates. Curved, large area, transparent, easy to integrate and soft light. Therefore, the industry has invested a lot of money in its industrialization research, and has made remarkable progress. At present, OLED has been applied in mobile phones, TVs, etc., and OLED lighting products are als...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/171H10K2102/321H10K71/00
Inventor 马东阁代岩峰孙倩陈江山王小利
Owner SOUTH CHINA UNIV OF TECH
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