Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optical device

An optical device and visible light technology, which is applied in the field of infrared optics, can solve the problem that the optical power of white light is difficult to achieve controllable adjustment, and achieve the effects of adjustable and controllable optical power, good application prospects, and strong anti-interference ability

Active Publication Date: 2020-01-10
GRIREM ADVANCED MATERIALS CO LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main problems of this implementation method are: the power of near-infrared luminous light still needs to be further improved, and the power of white light is difficult to achieve controllable adjustment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical device
  • Optical device
  • Optical device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] An optical device, the components of which are blue LED chips with a wavelength of 440nm and a molecular formula of Y 2.65 Ga 5 o 12 :0.35Ce 3+ The light absorber material, the molecular formula is Y 2 o 3 1.6Ga 2 o 3 0.06Cr 2 o 3 The near-infrared luminescent material; wherein the D50 particle size of the near-infrared luminescent material is 18 μm, and the near-infrared luminescent material accounts for 65% of the total mass ratio of the total luminescent material; the external quantum efficiency of the light absorber material is 0.003. Mix the near-infrared luminescent material of the present invention with the resin evenly, stir and defoam to obtain a near-infrared fluorescent conversion layer mixture, cover the mixture on the surface of the LED chip by spraying, and cure it into a near-infrared layer by baking. Fluorescent layer. Then, the light absorbing agent material is mixed with silica gel and evenly coated on the near-infrared fluorescence conversion...

Embodiment 5

[0044] An optical device, the components of which are blue LED chips with a wavelength of 455nm and a molecular formula of Y 2.65 Ga 5 o 12 :0.35Ce 3+ The light absorber material, the molecular formula is La 2.9 Si 6 N 11 :0.1Ce 3+ Visible light material, the molecular formula is Y 2 o 3 1.6Ga 2 o 3 0.06Cr 2 o 3 The near-infrared luminescent material; wherein the D50 particle size of the near-infrared luminescent material is 30 μm, and the near-infrared luminescent material accounts for 80% of the total mass ratio of the total luminescent material; the external quantum efficiency of the light absorber material is 0.003. Mix the near-infrared luminescent material of the present invention with silica gel evenly, stir and defoam to obtain a near-infrared fluorescent conversion layer mixture, cover the mixture on the surface of the LED chip by dispensing, and cure it by baking. Then mix the light absorbing agent material with silica gel and evenly coat it on the near-i...

Embodiment 10

[0047] An optical device, the components of which are blue LED chips with a wavelength of 420nm and a molecular formula of Y 2.65 Ga 5 o 12 :0.35Ce 3+ The light absorber material, the molecular formula is La 2.9 Si6 N 11 :0.1Ce 3+ Visible light material, the molecular formula is (Y 0.7 Al 0.3 ) 2 o 3 1.6Ga 2 o 3 0.04Cr 2 o 3 The near-infrared luminescent material; wherein the D50 particle size of the near-infrared luminescent material is 38 μm, and the near-infrared luminescent material accounts for 80% of the total mass ratio of the total luminescent material; the external quantum efficiency of the light absorber material is 0.003. Mix the near-infrared luminescent material of the present invention with silica gel evenly, stir and defoam to obtain a near-infrared fluorescent conversion layer mixture, cover the mixture on the surface of the LED chip by dispensing, and cure it by baking. Then, the visible light luminescent material and the light absorbing agent mat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses an optical device. The optical device comprises an LED chip, a light absorbing agent and / or a visible light light-emitting material and a near-infrared light-emitting material,wherein the power of 650-1000nm waveband light emitted by the near-infrared light-emitting material, the light absorbing agent and / or the visible light light-emitting material under the excitation ofthe LED chip is A, the sum of the power of 350-650nm waveband light emitted by the near-infrared light-emitting material and the visible light light-emitting material under the excitation of the LEDchip and the power of residual emitted light of the LED chip on the 350-650nm waveband after the LED chip excites the near-infrared light-emitting material and the visible light light-emitting material is B, and B / A*100% is 0.1%-10%. According to the optical device, the LED chip is simultaneously compounded with the near-infrared light-emitting material, the light absorbing agent and / or the visible light light-emitting material, near-infrared light emitting and visible light emitting are achieved at the same time through the same LED chip, and strong near-infrared light emitting and weak visible light emitting are obtained. The optical device has the advantage of being free of red explosion, simplifies the packaging process, reduces the packaging cost, and has the characteristics of beinghigh in light emitting efficiency and excellent in reliability performance.

Description

technical field [0001] The invention relates to the technical field of infrared optics, in particular to an optical device of an LED chip, a light absorbing agent and / or a visible light luminescent material, and a near-infrared luminescent material. Background technique [0002] In recent years, the application of near-infrared light in the fields of security monitoring, biometrics, 3D sensing, and food / medical testing has become a focus at home and abroad. Among them, near-infrared LED has become an international research hotspot because of its good directivity, low power consumption and small size. At present, the main implementation method of near-infrared LED is to use near-infrared semiconductor chips. For example, in the field of security, infrared chips with 730nm, 750nm, 850nm and 940nm bands are mainly used, especially short-wave infrared chips will produce very serious redness during use. Usually, one or more white LEDs are installed externally to compensate for t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/50
CPCH01L33/504
Inventor 刘荣辉刘元红李彦峰陈晓霞马小乐薛原
Owner GRIREM ADVANCED MATERIALS CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com