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Method for texturing silicon wafer by repeatedly utilizing black silicon cleaning solution

A cleaning fluid, black silicon technology, applied in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as high costs, and achieve the effect of reducing texturing costs and wastewater treatment costs

Active Publication Date: 2020-01-17
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to achieve the recovery and utilization of these metal ions, it is usually necessary to set up an additional metal recovery and treatment system, which requires high costs.

Method used

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  • Method for texturing silicon wafer by repeatedly utilizing black silicon cleaning solution
  • Method for texturing silicon wafer by repeatedly utilizing black silicon cleaning solution
  • Method for texturing silicon wafer by repeatedly utilizing black silicon cleaning solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Step 1: Take a P-type diamond wire-cut polycrystalline silicon wafer (resistivity 1-3Ωcm) with a size of 156mm×156mm, and immerse it in the acidic black silicon texturing solution in the texturing tank for texturing. The reaction temperature is 25°C. The time is 5 minutes, and discretely distributed silver metal particles are formed on the surface of the silicon wafer; among them, the acidic black silicon texturing solution is prepared from silver nitrate, copper nitrate, hydrofluoric acid, nitric acid and deionized, with a total volume of 300L, nitric acid The concentration of silver was 0.5 mmol / L, the concentration of copper nitrate was 50 mmol / L, the concentration of hydrofluoric acid was 3 mol / L, and the concentration of nitric acid was 4 mol / L.

[0055] Step 2: Take out the textured silicon wafer obtained in Step 1, wash it with deionized water, and dry it with high-purity nitrogen.

[0056] Step 3: Wash the dried silicon chip obtained in step 2 with black silicon...

Embodiment 2

[0065] Step 1: Take a P-type diamond wire cut polysilicon wafer (resistivity 1-3Ωcm) with a size of 156mm×156mm, and immerse it in the acidic black silicon texturing solution in the texturing tank for texturing. The reaction temperature is 30°C. The time is 5 minutes, and discretely distributed silver metal particles are formed on the surface of the silicon wafer; among them, the acidic black silicon texturing solution is prepared from silver nitrate, hydrofluoric acid, nitric acid and deionized, the total volume is 200L, and the concentration of silver nitrate is The concentration of hydrofluoric acid is 0.5mmol / L, the concentration of hydrofluoric acid is 4.5mol / L, and the concentration of nitric acid is 4mol / L.

[0066] Step 2: Take out the textured silicon wafer obtained in Step 1, wash it with deionized water, and dry it with high-purity nitrogen.

[0067] Step 3: Wash the dried silicon chip obtained in step 2 with black silicon cleaning solution to remove silver metal pa...

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Abstract

The invention discloses a method for texturing a silicon wafer by repeatedly utilizing a black silicon cleaning solution. The method comprises the following steps of (1) immersing the silicon wafer into a texturing solution containing 0.01-200 mmol / L of metal ion salt, 1-10 mol / L of hydrofluoric acid and 0.1-10 mol / L of black silicon for texturing; (2) cleaning the textured silicon wafer with thedeionized water, and blow-drying the textured silicon wafer; (3) cleaning the dried silicon wafer obtained in the step (2) by adopting a 20-80wt% nitric acid solution to remove the metal particles deposited on the surface of the silicon wafer; (4) cleaning the silicon wafer cleaned by the black silicon cleaning solution with the deionized water, and blow-drying to obtain the silicon wafer with a suede structure; and (5) repeating the steps (1) to (4) until the black silicon cleaning solution reaches the service life, and preparing the black silicon texturing solution by taking the black silicon cleaning solution reaching the service life as a raw material. According to the method, the black silicon cleaning solution, especially the metal ions in the black silicon cleaning solution, can besimply and effectively recycled, so that the texturing cost and the wastewater treatment cost are reduced, and the method is green and environment friendly.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for making texture on a silicon chip by repeatedly using a black silicon cleaning solution. Background technique [0002] Because of its large reserves and wide distribution, solar energy is of great significance to improving the existing energy structure. Solar power generation mainly uses solar cells to convert solar energy into electrical energy. Among them, silicon-based solar cells are currently the most widely used solar cells. Silicon-based solar cells mainly include monocrystalline silicon solar cells and polycrystalline silicon solar cells. [0003] At this stage, for monocrystalline silicon solar cells and polycrystalline silicon solar cells, diamond wire slicing technology can significantly reduce the cost of slicing silicon ingots, and ultimately reduce the cost of photovoltaic modules. However, the diamond wire slicing technology has not been fully applied i...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/306H01L31/18H01L31/0236
CPCH01L21/02057H01L21/30608H01L31/02363H01L31/1804Y02P70/50
Inventor 赵燕刘尧平王燕杜小龙朱姚培唐磊蒋健王磊
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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