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ArF photoresist resin with high adhesiveness and preparation method thereof

A photoresist, high-adhesion technology, applied in the field of circuit manufacturing materials, can solve the problems of substrate surface residues, lithography pattern defects, affecting product yield, etc., achieve easy removal, excellent adhesion, and reduce lithography patterns The effect of defects

Active Publication Date: 2020-01-31
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides an ArF photoresist resin with high adhesion, which aims to solve the inevitable residues on the surface of the substrate during the development process, which cannot be removed, which will cause defects in the photolithographic pattern and affect the product yield. other technical issues

Method used

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  • ArF photoresist resin with high adhesiveness and preparation method thereof
  • ArF photoresist resin with high adhesiveness and preparation method thereof
  • ArF photoresist resin with high adhesiveness and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0040]This embodiment provides a kind of ArF photoresist resin, and its preparation method comprises the following steps:

[0041] (1) 30g of butyrolactone methacrylate, 50g of 2-methyl-2-adamantyl methacrylate, 15g of isobornyl methacrylate and 5g of acrylonitrile are added in a reactor filled with nitrogen, and the reaction Add 50g of ethyl acetate in the kettle, stir the reaction kettle to 77°C, then add dropwise (dropping time is 10min) the first ethyl acetate 10g and 2g of dibenzoyl peroxide in the reaction kettle The mixed solution was reacted at 77°C for 7 hours, the reaction was stopped, and the temperature of the reaction kettle was cooled to room temperature;

[0042] (2) add the first methanol of 1000g in step (1) to the reaction kettle that is lowered to room temperature, after producing precipitation 1h, export the liquid in the described reaction kettle, then add the second ethyl acetate to the described reaction kettle Precipitation dissolved;

[0043] (3) Add...

Embodiment 2

[0048] This embodiment provides a kind of ArF photoresist resin, and its preparation method comprises the following steps:

[0049] (1) 29g of butyrolactone methacrylate, 48g of cyclopentyl methacrylate, 13g of isobornyl methacrylate and 10g of acrylonitrile are added in a reactor full of nitrogen, and 50g of ethyl acetate is added in the reactor After stirring evenly, the reaction kettle was heated to 77°C, and then a mixed solution of 8g of the first ethyl acetate and 1g of dibenzoyl peroxide was added dropwise (dropping time was 10min) into the reaction kettle, and reacted at 77°C After 7 hours, the reaction was stopped, and the reactor temperature was cooled to room temperature;

[0050] (2) add the first methanol of 1000g in step (1) to the reaction kettle that is lowered to room temperature, after producing precipitation 1h, export the liquid in the described reaction kettle, then add the second ethyl acetate to the described reaction kettle Precipitation dissolved;

...

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Abstract

The invention belongs to the technical field of circuit manufacturing materials, and provides an ArF photoresist resin with high adhesiveness and a preparation method thereof. The ArF photoresist resin comprises the following components in percentage by weight: 10%-40% of a lactone monomer, 20%-60% of an acid protection monomer, 0%-25% of a non-polar monomer and 0%-15% of a nitrile monomer. A nitrile group structure is introduced, the acting force between the resin and the surface of a base material can be increased, the adhesiveness is improved, and nitrile groups are different from silane coupling agents and cannot form chemical bonds with molecules on the surface of the base material, therefore, removing in the developing process can be realized easily, and no residue is left. A photoresist prepared by using the ArF photoresist resin has excellent adhesiveness, no residue of the photoresist in an exposure area is left, the defects of photoetching patterns are reduced, the product yield is improved, and the phenomena of photoresist pouring and stripping of the photoetching patterns are avoided.

Description

technical field [0001] The invention belongs to the technical field of circuit manufacturing materials, in particular to an ArF photoresist resin with high adhesion and a preparation method thereof. Background technique [0002] Photoresist is one of the key materials in the field of integrated circuit manufacturing. With the continuous development of manufacturing technology, the technical requirements for photoresist are getting higher and higher. In order to meet the increasingly stringent process conditions, it is necessary to develop higher performance photoresist Glue products. Compared with the traditional I-line, G-line, and KrF photoresists, ArF photoresist products have excellent resolution, which can reach below 55nm, and are the mainstream photoresist used in the current advanced integrated circuit manufacturing process. ArF photoresist is composed of resin, photosensitizer, additive solvent, etc. Resin is the carrier of photoresist performance, which has an imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/18C08F220/32C08F220/44G03F7/004
CPCC08F220/18G03F7/004
Inventor 马潇陈鹏樊丹周浩杰毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD