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Etching methods for anode silver reflecting layer and anode structure of micro-display device

A technology of micro-display device and anode structure, which is applied in the field of OLED micro-display, which can solve the problems of high risk of circuit short circuit, failure to meet precision requirements, easy undercut and inside cut, etc.

Pending Publication Date: 2020-01-31
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Ag etching is currently wet etching, and the accuracy of wet etching (line width > 3 μm), while the accuracy requirement of silicon-based Micro-OLED devices is 0.25 μm, wet etching cannot meet this accuracy requirement
On the other hand, for all wet etching, the essence is to etch through the chemical reaction between the etching solution and the material to be etched, so the etching is isotropic. After wet etching the silver film, its Profile Uncontrollable, prone to undercut and incision phenomena; the performance of the reflective layer taper silicon-based Micro-OLED device is greatly affected, if the taper is too large, it is easy to cause the subsequent film formation to be too thin or missing at the taper too large, resulting in circuit breakage; If the taper is too small, the overall line width will be larger than the actual measured line width, and the risk of short circuit is high

Method used

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  • Etching methods for anode silver reflecting layer and anode structure of micro-display device
  • Etching methods for anode silver reflecting layer and anode structure of micro-display device
  • Etching methods for anode silver reflecting layer and anode structure of micro-display device

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Embodiment 1

[0037] In the anode structure formed by PVD electroplating process on the silicon-based substrate of the CMOS drive circuit, the thickness of the Ti layer in the first buffer layer is The thickness of the TiN layer is The thickness of the Ag reflective layer is The thickness of the Ti layer in the second buffer layer is The thickness of the TiN layer is The pixel layer is the pixel electrode ITO, and the thickness of the pixel electrode ITO is

[0038] The method for patterning and etching the anode of a silicon-based Micro-OLED microdisplay device comprises the following steps:

[0039] Step 1. Complete the etching of the pixel layer 140 and the second buffer layer 130. The etching gas in this step is Cl 2 with BCl 3 , the gas flow rate is 1:1, the flow rate is controlled at 30sccm, the pressure is controlled at 5mTorr, the Source Power is controlled at 600W, and the Bias power is controlled at 120W.

[0040] Step 2: Complete the etching of the silver film on the...

Embodiment 2

[0043] In the anode structure formed by PVD electroplating process on the silicon-based substrate of the CMOS drive circuit, the thickness of the Ti layer in the first buffer layer is The thickness of the TiN layer is The thickness of the Ag reflective layer is The thickness of the Ti layer in the second buffer layer is The thickness of the TiN layer is The pixel layer is the pixel electrode ITO, and the thickness of the pixel electrode ITO is

[0044] The method for patterning and etching the anode of a silicon-based Micro-OLED microdisplay device comprises the following steps:

[0045] Step 1. Complete the etching of the pixel layer 140 and the second buffer layer 130. The etching gas in this step is Cl 2 with BCl 3 , the gas flow rate is 1:1, the flow rate is controlled at 40sccm, the pressure is controlled at 10mTorr, the Source Power is controlled at 500W, and the Bias power is controlled at 150W.

[0046] Step 2: Complete the etching of the silver film on th...

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Abstract

The invention discloses etching methods for the anode silver reflecting layer and anode structure of a micro-display device. According to the etching method for the anode silver reflecting layer of the micro-display device, with argon employed as an etching gas, physical bombardment etching is performed on silver through dry etching. According to the method, the silver film is bombarded by the ionization of Ar in the dry etching, so that the etching effect of the silver film can be achieved.

Description

technical field [0001] The invention belongs to the technical field of OLED microdisplays, and in particular relates to an etching method for an anode silver reflection layer and an anode structure of a microdisplay device. Background technique [0002] With the rapid development of display technology, displays that are thinner, lighter, wider viewing angle, higher brightness, faster response, lower power consumption, better flexibility, wider operating temperature, higher definition, and higher luminous efficiency can meet the new needs of consumers; In terms of these performances, Organic Light-Emitting Diodes (OLEDs) are superior to LCDs. Therefore, many companies are currently investing in the research and development of OLEDs, and OLED technology is also developing rapidly. At present, the mainstream OLED technology is top-emission and bottom-emission. Among them, top-emission is widely used because of its advantages of high aperture and high brightness. Top emission, ...

Claims

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Application Information

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IPC IPC(8): H01L51/00H01L51/52H01L21/3065H10K99/00
CPCH01L21/3065H10K71/231H10K50/82
Inventor 曹贺
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD