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A kind of etching method of multilayer graphene

A multi-layer graphene, acid etching solution technology, applied in the direction of photosensitive materials, electrical components, circuits, etc. for optomechanical equipment, can solve the problem that the vertical etching depth and lateral etching width of multi-layer graphene cannot be accurately controlled , the impact of graphene industrial application and other issues, to achieve the effect of precise control, reducing residues, and weakening the reaction rate

Inactive Publication Date: 2019-01-29
山东赛帝格新材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method cannot precisely control the vertical etching depth and lateral etching width of multilayer graphene, which has an impact on the industrial application of graphene.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A kind of etching method of multilayer graphene, comprises the following steps:

[0027] A, brush photoresist on the surface of multi-layer graphene, then photoresist is carried out exposure treatment, then use developer to clean photoresist;

[0028] B. Dividing the entire multilayer graphene surface into two parts on average, the thickness of the first part brushing the etching buffer remains at 70-100nm, and the thickness of the second part coating the etching buffer remains at 120-150nm;

[0029] C. Put the multilayer graphene into the reaction chamber, and the chamber is evacuated; inject ethane into the reaction chamber, then heat the reaction chamber, and turn on the radio frequency power supply, and conduct the first time on the surface of the multilayer graphene Etching; the air pressure in the reaction chamber was kept at 0.12 Torr, the reaction temperature was controlled at 180°C, the flow rate of ethane was kept at 125 sccm, and the power of the RF power sup...

Embodiment 2

[0047] This embodiment is improved on the basis of Embodiment 1, and mainly improves the etching process of step C. In step C,

[0048] Put the multilayer graphene into the reaction chamber, and the chamber is evacuated; inject ethane into the reaction chamber, then heat the reaction chamber, and turn on the radio frequency power supply to etch the surface of the multilayer graphene for the first time The air pressure in the reaction chamber is kept at 0.15 Torr, the reaction temperature is controlled at 190°C, the flow rate of ethane is kept at 115 sccm, and the power of the RF power supply is kept at 650W; the reaction time is 45s; then the flow rate of ethane is increased to 150 sccm, and then the flow rate is added The helium gas is 20 sccm and the nitrogen gas flow rate is 15 sccm, the pressure in the reaction chamber is increased to 0.18 Torr, the reaction temperature is controlled at 210° C., and the reaction time is 110 s.

[0049] By decomposing the etching process int...

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Abstract

The invention discloses an etching method of multi-layer graphene. The etching method comprises the following steps of A, painting photoresist on a surface of the multi-layer graphene, exposing the photoresist, and cleaning the photoresist with a developing liquid; B, painting etching buffer agents with different thicknesses at corresponding positions of the photoresist according to different etching depths; C, placing the multi-layer graphene in a reaction cavity chamber, vacuumizing the cavity chamber, injecting ethane to the reaction cavity chamber, heating the reaction cavity chamber, starting a radio frequency power source, and performing first etching on the surface of the multi-layer graphene; D, cleaning the multi-layer graphene subjected to the first etching with deionized water, and naturally drying the multi-layer graphene; E, immersing the multi-layer graphene in an acidic etching liquid for second etching; and F, cleaning the photoresist resided on the surface of the multi-layer graphene with a stripping liquid. By the etching method, the defect of the prior art can be overcome, and the accurate control of the etching process is achieved.

Description

technical field [0001] The invention relates to the technical field of graphene materials, in particular to an etching method for multilayer graphene. Background technique [0002] Graphene is one of the key research objects in the fields of physics and materials science in recent years. It is a strict two-dimensional crystal, bonded by sp2 hybridized carbon atoms and has a hexagonal lattice honeycomb two-dimensional structure. Graphene is very tough, with a fracture strength 200 times higher than the best steel. The most potential application of graphene at present is to become a substitute for silicon, to manufacture ultra-miniature transistors, and to produce future supercomputers. Replace silicon with graphene, and computer processors could run hundreds of times faster. In order to make a semiconductor circuit instead of a silicon wafer, it is necessary to etch the surface of graphene. Chinese invention patent CN 101996853 B discloses a method for anisotropic etching...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/3065G03F7/004
CPCG03F7/004H01L21/30604H01L21/3065
Inventor 李恕广李泰胧王连军
Owner 山东赛帝格新材料有限责任公司