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High-quality Seed Wafer Cultivation Method of Artificial Quartz Crystal

A quartz crystal and seed crystal technology, applied in the field of artificial quartz crystal frame-shaped + X-direction crystal growth and seed wafer manufacturing, can solve the problem of no frame seed wafer processing description and other problems

Active Publication Date: 2021-05-25
山东博达光电有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] In the document "NEW TECHNIQUE TO DECREASE DISLOCATION IN SYNTHETIC QUARTZ CRYSTAL", the technical principle of the frame seed crystal method is explained and affirmed, but the document does not have a specific description of the processing of the frame seed wafer; therefore, how to operate in order to realize the cultivation of artificial quartz High-quality seeds of crystals, currently unknown

Method used

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  • High-quality Seed Wafer Cultivation Method of Artificial Quartz Crystal
  • High-quality Seed Wafer Cultivation Method of Artificial Quartz Crystal
  • High-quality Seed Wafer Cultivation Method of Artificial Quartz Crystal

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Embodiment 1

[0057] Step 1. The artificial quartz crystal is first cut into a frame-shaped crystal that only retains part of the positive and negative axis areas (cutting the frame crystal):

[0058] Artificial quartz crystals to be cut (such as figure 1 ), the crystal length (Y) is about 230mm; the crystal thickness (Z) is about 75mm; the crystal width (X) is about 100mm.

[0059] Artificial quartz crystals to be cut (such as figure 1 One Z surface (optical axis surface) and +X surface (positive electric axis surface) are ground, and the orientation accuracy of the ground two planes is guaranteed to be within ±10'; on the other unground Z surface (optical axis surface) ) to draw the part that needs to be cut off --- cut off part 1, that is, according to the common sense of this industry, draw according to the different growth mounds and regional boundaries of the Z zone and the X zone on the unground Z surface (optical axis surface) The width of the X region to be reserved is enough; th...

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Abstract

The invention discloses a method for cultivating high-quality seed wafers of artificial quartz crystals, which comprises the following steps: 1. cutting the artificial quartz crystals to be cut into frame crystals which only retain part of the positive and negative electric axis regions; 2. cutting the frame crystals into Frame seed wafer; 3. Place the frame seed wafer in an autoclave for crystal growth; 4. Cut the growing part of the frame crystal to obtain a high-quality seed wafer. The present invention utilizes the characteristics that the crystals grown in the +X direction (positive electric axis direction) of the quartz crystal will not inherit the defects on the seed wafer to cultivate high-quality seed wafers, and cut the grown part of the crystals into the seed wafers. Thus, a high-quality seed wafer with low etch tunnel density is obtained.

Description

technical field [0001] The invention relates to a high-quality seed wafer cultivation process of an artificial quartz crystal, in particular to a frame-shaped +X direction (positive electric axis direction) crystal growth of an artificial quartz crystal and a seed wafer manufacturing technology. Background technique [0002] Artificial quartz crystal has good piezoelectric and optical properties, and is an important crystal material in the fields of electronics and optics. [0003] Artificial quartz crystals are grown on seed wafers by hydrothermal temperature difference method. The earliest seed wafers were cut from natural quartz crystals. Difficult, the current seed wafer is cut from the artificial quartz crystal; however, due to the crystalline characteristics of the artificial quartz crystal, the defects on the seed wafer will be inherited to the grown crystal. Cutting the seed wafer in the quartz crystal causes more and more lattice and corrosion tunnel defects in the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/10C30B29/18B28D5/04
CPCB28D5/04B28D5/042C30B7/10C30B29/18
Inventor 刘盛浦易际让王晓刚
Owner 山东博达光电有限公司
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