A Magnetron Sputtering Table with Adaptive Ion Strength

Abstract

The invention relates to the technical field of integrated circuits, and discloses a magnetron sputtering table with adaptive ion intensity, including a body, a sputtering chamber, a shield, a rotating electrode, a substrate, a sputtering target, and a bottom plate. Both sides of the sliding block are fixedly connected with sliding blocks, the number of the sliding blocks is two, a support rod is fixedly connected between the two sliding blocks, the bottom of the support rod is fixedly connected with a positioning rod, and the positioning rod The end of the magnetic block is fixedly connected with a magnetic block, and the bottom of the magnetic block is fixedly connected with a support rod. Through the cooperation between the sliding block and the support rod, the bottom plate is optimized from fixed installation to sliding installation, so that the substrate can move at different distances, and at the same time, through the principle of magnetic attraction, the substrate can be sputtered according to The sputtering power automatically moves to a better position. When the power is high, the magnetic force releases a large attraction force, which makes the substrate automatically move downwards and open the distance between the substrate and the sputtering target.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a magnetron sputtering table with adaptive ion intensity. Background technique [0002] In the semiconductor manufacturing process, in order to strengthen and endow the substrate with different functions, a magnetron sputtering station is required, which uses an electric field to collide with argon atoms to ionize them to generate Ar positive ions and new electrons; the new electrons fly to Substrate, adsorbed on the substrate to form a thin film. [0003] The working principle of the existing magnetron sputtering station is that the substrate is placed on the substrate, and then the gas in the magnetron chamber is pumped out by using a centrifugal pump and a vacuum pipeline, and then the electrons are accelerated to fly to the substrate under the action of an electric field. During the process, it collides with argon atoms, ionizes a large number of argon ions and e...

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Problems solved by technology

[0003] The working principle of the existing magnetron sputtering station is that the substrate is placed on the substrate, and then the gas in the magnetron chamber is pumped out by using a centrifugal pump and a vacuum pipeline, and then the electrons are accelerated to fly to the substrate under the action of an electric field. During the process, it collides with argon atoms, ionizes a large number of argon ions and electrons, and the electrons fly to the substrate. or molecules) are deposited on the substrate to form a film, and the annular magnetic field used by magnetron sputtering forces the secondary electrons to hop around along the annular magnetic field. Correspondingly, the area controlled by the annular magnetic field is the part with the highest plasma density , with the injection of argon gas, a strong light blue glow will be emitted at this position and a halo will be formed. The substrate under the halo is bombarded with high intensity by ions, and the distance between the sputtering target and the substrate is different. As the strength increases, a ring-shaped groove appears on the surface of the substrate due to physical impact, resulting in uneven thickness of the film on the substrate, and the surface of the substrate is not smooth, causing the substrate to be scrapped and unusable. The use of sputtering power increases continuously. With the increase of power, the bombardment effect is stronger, and the resulting film surface defects and residual stress in the film are relatively large, and the residual stress extends along the loose cracks in the film, resulting in The increase of surface defects and the internal structural defects of the film further reduce the quality of the substrate, making the substrate unusable

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