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Pressure regulation components, lower electrode assemblies, process chambers and semiconductor processing equipment

A pressure regulation and electrode device technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of affecting the uniformity of etching, increasing helium helium leakage, and reducing product quality, so as to avoid etching The effect of waste film, reducing production cost and improving product yield

Active Publication Date: 2022-05-27
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, abnormal helium often occurs in production, mainly because helium drops significantly during the etching process and helium leakage continues to increase during the etching process, which will adversely affect etching, affect etching uniformity, and reduce product quality. quality

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  • Pressure regulation components, lower electrode assemblies, process chambers and semiconductor processing equipment

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Embodiment Construction

[0038] The following embodiments of the present invention in conjunction with the accompanying drawings are described in detail. It should be understood that the specific embodiments described herein are used only to illustrate and explain the present invention and are not intended to limit the present invention.

[0039] The background of the present invention is described below.

[0040] In the conventional lower electrode device, the lower electrode device comprises a base, a sealing ring placed on the base and a tray placed on the sealing ring, using a ring or a pressure-clawed pressure ring to fix the tray at a fixed pressure, to ensure that the cooling gas between the tray and the base (e.g., helium, etc., the following will be helium as an example) can move in a specific space, the wafer is cooled.

[0041] However, in the lower electrode device of the above structure, due to the pressure fixation of the pressure ring, it is easy to cause problems with helium stability in the...

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Abstract

The invention discloses a pressure regulating component, a lower electrode device, a process chamber and semiconductor processing equipment. It includes a controller and a drive structure; one control end of the drive structure is communicatively connected to the output end of the controller, and the other end is used to connect with the pressure ring; the controller is used to detect the flow of cooling gas in real time and adjusting the pressure applied by the drive structure to the pressure ring according to the flow fluctuation signal of the cooling gas, so that the flow of the cooling gas passing between the tray and the base is stable. The pressure adjustment component includes a controller and a drive structure. The controller can adjust the pressure applied by the drive structure to the pressure ring according to the flow fluctuation signal of the cooling gas, so that the flow of the cooling gas can be stabilized, and the flow fluctuation signal of the cooling gas can be eliminated. The leakage phenomenon of the cooling gas can be effectively eliminated, the etching waste chips can be avoided, the product yield rate can be improved, and the production cost can be reduced.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor equipment, specifically to a pressure regulation assembly, a lower electrode device, a process chamber and a semiconductor processing device. Background [0002] Patterned Sapphire Substrate (PSS) technology is a commonly adopted method to improve the luminous efficiency of GaN-based LED chips. The mainstream PSS is mainly based on dry etching, dry etching is to mount the surface photoresist patterned multi-piece sapphire substrate on a tray, and then use the tray to transfer the wafer into the process chamber, the pressure ring fixes the tray, the process chamber is fed into the etch reaction gas, and the process gas forms a plasma through inductive coupling, etching the wafer on the tray. Since the etching process will generate a large amount of heat on the surface of the wafer and the tray under the action of plasma, causing the temperature of the wafer and the tray to rise, adversely ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/683H01L21/687
CPCH01L21/67011H01L21/67017H01L21/683H01L21/687
Inventor 高明圆
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD