Press fitting structure applied to pressure welding type MOSFETs

A press-fit structure and crimp-type technology, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve problems such as pressure differences, and achieve the effect of simple structure and wide application range

Pending Publication Date: 2020-02-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When using GCT or GTO, molybdenum sheets need to be crimped on both sides, and a pressure of tens of kN or more should be applied, while a single crimped MOSFET can only withstand a pressure of 50-100N. Therefore, if the MOSFET is integrated into the shell Inside, there are pressure differences and fit issues of the different components

Method used

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  • Press fitting structure applied to pressure welding type MOSFETs
  • Press fitting structure applied to pressure welding type MOSFETs
  • Press fitting structure applied to pressure welding type MOSFETs

Examples

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Embodiment Construction

[0039] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0040] In one embodiment, the press-fit structure applied to the press-fit MOSFET array is structurally as image 3 As shown, it includes from top to bottom: a first copper block 1 , an elastic structure 2 , a crimping MOSFET 3 , a circuit board 4 , and a second copper block 5 . Wherein, a groove is provided at the bottom of the first copper block 1, and the elastic structure 2 and the crimping MOSFET 3 are placed in the groove. Wherein, the press-fit structure includes one or more elastic structures 2 and press-fit MOSFETs 3, and the elastic structures 2 correspond to the press-fit MOSFETs 3 one by one, and one or more grooves are provided at the bottom of the first copper block 1, each group The elastic structure 2 and the press-fit MOSFET 3 are arranged in the corresponding grooves, formin...

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Abstract

The invention provides a press fitting structure applied to pressure welding type MOSFETs. The press fitting structure comprises a first copper block, an elastic structure, the pressure welding type MOSFEs, a circuit board and a second copper block. The multiple pressure welding type MOSFEs can form a parallel array and are arranged in a ring or matrix shape. The press fitting structure is simpleand compact in structure, the flow capacity and the heat dissipation capacity are enhanced, and the applicable range is widened.

Description

technical field [0001] The invention relates to a press-fit structure of a MOSFET, in particular to a press-fit structure applied to a crimp-type MOSFET or a crimp-type MOSFET array, and belongs to the technical field of electrical engineering. Background technique [0002] Metal-Oxide Semiconductor Field-Effect Transistor, abbreviated as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), is a field-effect transistor that can be widely used, and it can be applied to such as microprocessors, In the case of digital signal processing such as microcontrollers, more and more integrated circuits for analog signal processing are implemented with MOSFETs. [0003] The traditional MOSFET has a lateral flow structure, and its gate, drain, and source are usually welded on the circuit board. The heat generated by the device is mainly dissipated through the circuit board. Affected by the package type, the heat dissipation capability is poor. limited its flow capacity. Press-fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L23/48
CPCH01L25/072H01L24/72H01L2224/16225H01L2224/73253
Inventor 陈政宇曾嵘赵彪余占清刘佳鹏周文鹏
Owner TSINGHUA UNIV
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