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Electrostatic chuck, and production method therefor

一种静电卡盘、电极的技术，应用在电路、应用静电吸引力的保持装置、放电管等方向，能够解决晶片温度变高、等离子体处理工艺成品率变差等问题

Active Publication Date: 2020-02-07
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the focus ring is much thicker than the electrostatic chuck, it may not be sufficiently attracted to the electrostatic chuck, and the temperature rise may become excessive, thereby increasing the temperature of the outer peripheral edge of the wafer, and there is a possibility that the yield of the plasma processing process may deteriorate. to worry about

Method used

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  • Electrostatic chuck, and production method therefor
  • Electrostatic chuck, and production method therefor
  • Electrostatic chuck, and production method therefor

Examples

Experimental program
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Embodiment Construction

[0038] While referring to the attached Figure 1 Preferred embodiments of the present invention will be described below. figure 1 is a longitudinal sectional view of the electrostatic chuck 20, figure 2 It is an explanatory diagram showing an example of the manufacturing method of the electrostatic chuck 20, image 3 It is an explanatory diagram for handling a wafer W using the electrostatic chuck 20 .

[0039] The electrostatic chuck 20 is a part used in the wafer mounting device 10 for etching, CVD, etc., on the wafer W using plasma, and the wafer mounting device 10 is used by being fixed to the bottom surface of a chamber 80 for a semiconductor process (refer to image 3 ). The wafer mounting apparatus 10 includes a focus ring 50 and a cooling plate 70 in addition to the electrostatic chuck 20 .

[0040]The electrostatic chuck 20 includes a disc-shaped ceramic base 22 . The ceramic base 22 has a circular wafer mounting surface 22a on which the wafer W is mounted, and ...

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PUM

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Abstract

An electrostatic chuck (20) is provided with: a discoid ceramic substrate (22) which has, provided to the outside of a circular wafer placement surface (28a), an annular stepped surface (24a) having alower position than the wafer placement surface (28a), said ceramic substrate having a volume resistivity with which Coulomb force can be exerted; a wafer attaching electrode (32) which is embedded in a position inside the ceramic substrate (22) which faces the wafer placement surface (28a); a focus ring attaching electrode (38) which is provided on the annular stepped surface (24a) of the ceramic substrate (22) independently from the wafer attaching electrode (32); and a sprayed film (28) which covers the annular stepped surface (24a) where the focus ring attaching electrode (38) is provided, and which has a volume resistivity with which Johnsen-Rahbek force can be exerted. The upper surface of the sprayed film (28) is a focus ring placement surface (28a) on which a focus ring is to be placed.

Description

technical field [0001] The invention relates to an electrostatic chuck and a method for making the same. Background technique [0002] Conventionally, plasma processing apparatuses such as plasma etching apparatuses, plasma CVD apparatuses, and plasma ashing apparatuses are known. In such a plasma processing apparatus, a wafer mounting device for mounting a wafer is generally provided in a vacuum chamber. The wafer mounting apparatus includes an electrostatic chuck for suction-fixing a wafer to be subjected to plasma processing on a wafer mounting surface, and a cooling plate for cooling the electrostatic chuck. As an electrostatic chuck, an electrostatic chuck in which internal electrodes are embedded in an insulator or a dielectric (mostly ceramics) is used. In such a wafer mounting apparatus, a DC voltage is applied to internal electrodes to generate an electrostatic force (Coulomb force or Johnson-Rabeck force) while the wafer is mounted on the wafer mounting surface, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H02N13/00
CPCH01L21/67109H01L21/68735H01L21/6833H02N13/00B23Q3/15H01L21/68757H01L21/68785H01J37/32642H01J37/32715H01L21/67098
Inventor 久野达也森冈育久片居木俊相川贤一郎
Owner NGK INSULATORS LTD