Preparation method of aluminum-doped graphene material

A graphene and aluminum doping technology, applied in the field of materials, can solve problems such as changing physical properties

Active Publication Date: 2021-06-22
SUZHOU UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this invention only uses XPS to measure the presence of the dopant, and does not verify and fully explain whether Al atoms have been completely doped into the graphene structure, or whether they are only doped into graphite in the form of particles, but the atoms are successfully doped Going into the graphene structure is the most important thing to change the physical properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of aluminum-doped graphene material
  • Preparation method of aluminum-doped graphene material
  • Preparation method of aluminum-doped graphene material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The present embodiment provides a kind of preparation method of aluminum-doped graphene material, and the steps are as follows:

[0037] 1. Vacuuming: The CVD system vacuum system is used to pump the vacuum of the furnace body below 28 Pascals to remove the influence of other gases in the furnace body.

[0038] 2. Purge: use argon (200 sccm) to purge the furnace body to further improve the cleanliness of the furnace body.

[0039] 3. Heating: Heating the furnace body to raise the temperature from room temperature to 1025 degrees Celsius within 45 minutes, and during the heating process, feed 5v% hydrogen and 95v% argon (16sccm).

[0040] 4. Annealing: Place the copper foil T (4.5cm x 1cm) inside the quartz tube built in the furnace body. The diameter of the quartz tube is 15mm. Heat it at 1025 degrees Celsius for 30 minutes. During the whole process, it is in 5v% hydrogen and 95v% argon (16sccm) atmosphere. The quartz tube has a cylindrical shape including a curved cl...

Embodiment 2

[0046] The present embodiment provides a kind of preparation method of aluminum-doped graphene material, and the steps are as follows:

[0047] 1. Vacuuming: The CVD system vacuum system is used to pump the vacuum of the furnace body below 28 Pascals to remove the influence of other gases in the furnace body.

[0048] 2. Purge: use argon (200 sccm) to purge the furnace body to further improve the cleanliness of the furnace body.

[0049] 3. Heating: The furnace body is heated to raise the temperature. Within 45 minutes, the temperature rises from room temperature to 1025 degrees Celsius, and during the heating process, 5v% hydrogen and 95v% argon (16sccm) are introduced.

[0050] 4. Annealing: Place the copper foil T (4.5cm x 1cm) in the quartz tube built in the furnace body. The diameter of the quartz tube is 15mm, and heat at 1025 degrees Celsius for 30 minutes. The quartz tube has a cylindrical shape including a curved closed end and an open end. The closed end of the qua...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing an aluminum-doped graphene material, which is prepared by a CVD method, comprising the following steps: in a furnace body of a CVD system, under the condition that the degree of vacuum is lower than 28 Pascals, placing a substrate in a quartz tube Annealing at 1000-1050°C, feeding mixed gas, the quartz tube has a closed end and an open end; put the organoaluminum compound in the quartz tube, react in the mixed gas atmosphere, the reaction temperature is 1000-1050°C, the reaction is complete Finally, the aluminum-doped graphene material is obtained; wherein, the organoaluminum compound is placed outside the furnace body of the CVD system, and the distance from the nearest edge of the furnace body of the CVD system is 9.5-10.5 cm. The method of the invention successfully realizes the doping of aluminum atoms in the graphene.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a method for preparing an aluminum-doped graphene material. Background technique [0002] The development of clean and renewable energy is a major strategy for my country's social and economic development. In all levels of new energy technology, electrochemical energy storage plays an extremely important role, and it is also a hot issue in current scientific research. As a new two-dimensional structure conductive material, the application of graphene has great significance and great development potential in this field. [0003] In 2010, Professor Geim and Dr. Novoselov of the University of Manchester in the UK were awarded the Nobel Prize in Physics for their breakthrough discovery of graphene for the first time in 2004 when they successfully peeled off the graphene film. Since then, two-dimensional nanomaterials represented by graphene have set off an upsurge of research on ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194
Inventor 马克如姆里萨米乌拉赫它光辉杨晓琴刘玉施启涛王美欧刘玉莲刘立军
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap