Method of manufacturing SMIM capacitor structure and capacitor structure
A capacitance structure and electrode technology, which is applied in the direction of capacitors, circuits, electrical components, etc., can solve the problems of long production cycle and complicated operation of SMIM capacitors, and achieve the effects of shortening the production cycle, simplifying the process flow, and improving production efficiency
Active Publication Date: 2020-02-11
福建省福联集成电路有限公司
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] For this reason, it is necessary to provide a method and a capacitor structure for manufacturing SMIM capacitor structures, so as to solve the problems of long cycle and complicated operation in the manufacturing process of SMIM capacitors
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0055] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.
[0056] see Figure 1 to Figure 12 , this embodiment provides a manufacturing method of a SMIM capacitor structure, and this manufacturing method can be manufactured on a wafer 1 . It includes the following steps: making the first layer of electrodes 2 on the wafer 1; first coating the photoresist on the wafer 1, patterning the photoresist, that is, exposing and developing to open the part where the metal is to be deposited, and then depositing the metal. The method can be evaporation, sputtering or electroplating. Finally, the metal is lifted off and the photoresist is removed, and the metal in the opening is retained, so as to obtain the first layer of electrodes 2. The structure of the first layer of electrodes 2 is as follows: fig...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method of manufacturing an SMIM capacitor structure and the capacitor structure. The method comprises steps of: coating a photoresist on a wafer with a first layer electrode,a first dielectric layer, a second layer electrode and a second dielectric layer, carrying out exposure and development by using photomasks with different light transmission degrees, enabling a semi-shading film to correspond to a dielectric contact groove and enabling a shading film or a full light transmission film to correspond to a meta contact groove, etching the dielectric layers by takingthe photoresist as a mask to obtain a metal contact groove and a dielectric contact groove at the same time, and depositing metal at the positions of the metal contact groove and the dielectric contact groove. Multiple processes in the traditional process are omitted, the process flow of manufacturing the SMIM capacitor is simplified, the production period is shortened, and the production efficiency is improved.
Description
technical field [0001] The invention relates to the technical field of capacitor manufacturing, in particular to a method for manufacturing an SMIM capacitor structure and the capacitor structure. Background technique [0002] In the field of semiconductor devices, capacitors are one of the commonly used passive devices, which are usually integrated in active devices such as bipolar transistors or complementary metal-oxide-semiconductor transistors. Among them, stacked film capacitors (STACK MIM, SMIM for short) capacitors are widely used in integrated circuits, and have a higher capacitance than single-layer capacitors in the same area, saving device area. It mainly involves many process steps, deposition, exposure, development, etching. The repeatability of these process steps is high, but the interval is short, and often one or two steps need to carry out similar process operations in the previous step, resulting in a long production cycle for the entire capacitor. Ther...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64
CPCH01L28/40H01L28/90H01L28/91
Inventor 吴恋伟魏育才林伟铭
Owner 福建省福联集成电路有限公司