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Backside image sensor and manufacture method thereof

A technology of an image sensor and a manufacturing method, applied in the semiconductor field to achieve the effect of improving imaging performance

Active Publication Date: 2020-02-14
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method requires that the pixel array area connected to the N-type implant region be neutral, otherwise the isolation is ineffective

Method used

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  • Backside image sensor and manufacture method thereof
  • Backside image sensor and manufacture method thereof
  • Backside image sensor and manufacture method thereof

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Embodiment Construction

[0048] The image sensor and the manufacturing method of the image sensor proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0049] figure 1 A schematic cross-sectional view of a back-illuminated image sensor. Such as figure 1As shown, the back-illuminated image sensor includes a pixel and logic device substrate 103, the pixel and logic device substrate 103 includes a pixel array region 101 and a peripheral logic region 102 located around the pixel array region 101, and the pixel and logic device substrate 103 includes Opposite front and back, the interconnection metal layer ...

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Abstract

The invention provides a backside image sensor and a manufacturing method thereof. In the backside image sensor, the front side of a pixel and logic device substrate is provided with an interconnection metal layer, the back side is provided with a high-K material passivation layer, and one side of the back side is provided with an isolation trench located between a pixel array area and a peripheral logic area. The isolation trench separates the high-K material passivation layer and the depth does not exceed the interconnection metal layer. The high-K material passivation layer can reduce the dark current and white spot defects of the image sensor, while the isolation trench can avoid the influence of the peripheral circuit noise on the pixel array area, which is helpful to improve the performance of the backside image sensor. The manufacturing method of the backside image sensor provided by the invention can be used for manufacturing the above backside image sensor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a back-illuminated image sensor and a manufacturing method thereof. Background technique [0002] Complementary Metal Oxide Semiconductor (CMOS) image sensors have the advantages of high image acquisition speed, low power consumption, high dynamic range and high noise immunity, and are widely used in digital electronics such as mobile phone cameras, security monitoring, Visual communication, automotive radar, industrial video surveillance, medical equipment, machine vision and other aspects have broad market prospects. With the development of 3D through-silicon via (TSV) technology, the integration of semiconductor devices has been further improved. At the same time, the application of TSV technology in complementary metal oxide semiconductor image sensors (CMOS Image Sensor, CIS) has gradually transformed CIS devices into A back-illuminated image sensor with improved per...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/1463H01L27/14683H01L27/14698
Inventor 张磊姬峰王奇伟陈昊瑜
Owner SHANGHAI HUALI MICROELECTRONICS CORP