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Method for reducing cutting efficiency loss of solar cell chip and photovoltaic module

A solar cell and cutting efficiency technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve the problems of large efficiency loss and high fragmentation rate, and achieve the effects of low fragmentation rate, increased absorption, and reduced surface reflection

Active Publication Date: 2020-02-18
德运创鑫(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method and a photovoltaic module for reducing efficiency loss of solar cell chip cutting, aiming to improve the problems of high fragmentation rate and large efficiency loss after slicing in the prior art

Method used

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Embodiment 1

[0035] Embodiment 1 of the present invention provides a method for reducing cutting efficiency loss of solar cell chips, comprising the following steps:

[0036] S1 Use silicon wafer (N-type monocrystalline silicon) as the substrate to make solar cell chips;

[0037] S11 Silicon wafer pretreatment: S1101 Silicon wafer texturing; S1102 First laser scribing: On the front surface of the silicon wafer where laser slitting is required, use an infrared pulse laser with a wavelength of 1064 nm and a power of 20W to scribble the surface of the silicon wafer. Groove; the depth of the groove is 5-20 microns, combined with the characteristics of single crystal silicon, the laser energy can be increased at the beginning and end of the laser; S1103 cleaning: use wet chemical cleaning method.

[0038] S12 Preparation of intrinsic layer and doped layer: Utilize PECVD (Plasma Enhanced Chemical Vapor Deposition) technology to deposit intrinsic amorphous silicon film passivation layer on the fr...

Embodiment 2

[0046] The same as the first embodiment, the difference is that in step S11, the first laser scribing is performed first, and then the texturing of the silicon wafer is performed.

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Abstract

The invention provides a method for reducing the cutting efficiency loss of a solar cell chip and a photovoltaic module, and relates to the technical field of solar cell modules. The invention provides the method for reducing the cutting efficiency loss of the solar cell chip. The method comprises the following steps in turn: S1 making the solar cell chip with a silicon wafer as a substrate, wherein scribing the silicon wafer with a first laser; S2 second laser slicing: the solar cell chip made in the step S1 is subjected to second laser slicing. The battery chip is effectively cut without wrenching through the cooperation of first laser splicing and second laser splicing and the debris rate is low; the laser scribing step is arranged in the manufacturing process of the battery chip, and the manufacturing of the battery chip is not yet completed. After the first laser scribing, the damage to the battery chip caused by scribing and subsequent cutting is reduced, thus reducing the cutting efficiency loss.

Description

technical field [0001] The invention relates to the technical field of solar cell components, in particular to a method for reducing cutting efficiency loss of solar cell chips and a photovoltaic component. Background technique [0002] With the continuous progress of technology, half-cut and laminated photovoltaic modules have developed rapidly in the past two years, and laser slicing is an indispensable process in the production of half-cut and laminated modules. Traditional crystalline silicon substrate battery cutting is performed after the battery chip is produced. At present, there are two mainstream cutting methods: one is to use nano-laser, incident on the aluminum back surface, and cut about 2 / 3 of the thickness of the entire battery chip, then use The way of "breaking" the piece is split; another way is to cut the groove first, and then use the laser to split through thermal stress. The following technical problems exist in the above cutting method: high fragmenta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18B23K26/359
CPCB23K26/359H01L31/1804Y02E10/547Y02P70/50
Inventor 张伟胡德政李沅民徐希翔
Owner 德运创鑫(北京)科技有限公司
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