Magnetic memory element having plurality of magnetization directions and memory device
A magnetization direction, storage element technology, applied in electrical components, magnetic field-controlled resistors, electric solid devices, etc., can solve problems such as long switching time
Inactive Publication Date: 2020-02-25
湖北华磁电子科技有限公司
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Problems solved by technology
The switching time of the magnetization of the spin injection magnetization switching element using a perpendicular magnetization film may be longer than T
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[0010] figure 1 In the present invention, the storage element 3 including the spin transfer torque magnetic random access memory (STT-MRAM) capable of storing information according to the magnetization state is arranged near the intersection of the two address interfaces. R connections perpendicular to each other (eg word line and bit line). In a portion isolated by element isolation layer 2 , drain region 8 , source region 7 and gate electrode 1 of a selection transistor for selecting each memory element 3 are formed in semiconductor substrate 10 such as a silicon substrate. Among them, the gate electrode 1 also serves as figure 1 Address interconnects (word lines) extending in the front-to-back direction. A drain region 8 is usually formed together with the left and right select transistors, and an interconnect 9 is connected to the drain region 8 . A storage element 3 having a magnetization direction switched by spin torque magnetization switching is arranged in the sour...
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The invention provides a memory element. The memory element comprises a memory layer in a magnetization direction, is configured to record information in the memory layer in response to a current applied in a stacking direction of a stacked structure, and includes at least: a first ferromagnetic layer, a bonding layer stacked on the first ferromagnetic layer, and a second ferromagnetic layer stacked on the bonding layer; the memory element also includes a fixed magnetization layer having a fixed magnetization direction, and an intermediate layer provided between the memory layer and the fixedmagnetization layer; the memory layer is configured to maintain the magnetization direction of the first ferromagnetic layer at a predetermined current; the second ferromagnetic layer is at a predetermined angle, wherein the predetermined angle is greater than 0 degree and less than 180 degrees with respect to the fixed magnetization direction; the first ferromagnetic layer has a magnetization direction closer to the stacking direction than a direction parallel to the stacking direction; the second ferromagnetic layer has a magnetization direction closer to a direction perpendicular to the T direction; the stacking direction of 0 is closer to the stacking direction than the direction parallel to the stacking direction; and the middle layer is a tunnel insulating layer.
Description
technical field [0001] The invention relates to a storage element and a storage device, in particular to a magnetic storage element and a storage device with multiple magnetization directions. Background technique [0002] In information processing equipment, a high-speed high-density dynamic random access memory (DRAM) is widely used as a random access memory. In information processing equipment, a high-speed high-density dynamic random access memory (DRAM) is widely used as a random access memory. In information processing equipment, a high-speed high-density dynamic random access memory (DRAM) is widely used as a random access memory. Recording is performed in MRAM by switching magnetization using a current magnetic field, or directly injecting spin-polarized electrons into a recording layer to cause magnetization switching. In order to further miniaturize the element, a method of using a perpendicular magnetization film, in which the direction of magnetization of a mag...
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IPC IPC(8): H01L27/105H01L43/08H10N50/10
CPCH01L27/105H10N50/10
Inventor 郭皓黄刚彭长宏
Owner 湖北华磁电子科技有限公司