Method of Proton Displacement Damage Equivalent Based on Gated Lpnp Transistor

Abstract

The invention belongs to the technical field of proton displacement damage, specifically relates to a method for performing proton displacement damage equivalence based on a grid-control LPNP transistor, and solves the technical problem of an equivalence test for a proton irradiation displacement damage effect of a semiconductor device. According to the method, the surface recombination of a modulation transistor is controlled by utilizing grid voltage, the surface recombination is inhibited by utilizing a grid control method, the minority carrier lifetime is directly measured, and the equivalence between a proton displacement damage effect and 1 MeV neutron irradiation damage is realized through a functional relation between the minority carrier lifetime and 1 MeV equivalent neutron fluence. A grid-control charge separation analysis method selected by the invention can simultaneously measure a cumulative ionizing radiation total dose effect introduced by proton irradiation damage andrealize quantitative measurement on oxide charge density and interface trap density.

Description

technical field [0001] The invention relates to a method for equivalent proton displacement damage based on gate-controlled lateral structure PNP transistor charge separation technology. Background technique [0002] With the continuous development of space technology, more and more electronic devices have been used in the space radiation environment. The displacement damage effect caused by high-energy protons in the space environment will cause serious damage to the performance of electronic devices. Therefore, the equivalent analysis of proton displacement damage It is of great significance for evaluating the resistance to spatial displacement damage of electronic devices. [0003] Protons are charged particles that can simultaneously produce ionizing radiation effects and displacement damage effects in semiconductor devices. When ionization effects and displacement damage effects act on electronic devices at the same time, due to the coupling between the effects, the dis...

AI Technical Summary

Problems solved by technology

[0005] Since the ionization effect produced by proton irradiation on electronic devices will have a serious impact on the displacement damage effect, there are great limitations in evaluating the degradation characteristics of semiconductor devices using conventional performance parameters; in terms of theoretical methods, widely adopted methods based on non-ionization energy loss The main consideration in the calculation method is the deposition of non-ionization energy related to the initial defect, and the influence of the subsequent annealing of the defect cannot be considered

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