Ultra-micro circuit board based on ultra-thin glue-free flexible carbon-based material and preparation method thereof
A technology of flexible circuit boards and carbon-based materials, which is applied in the direction of circuit substrate materials, printed circuit manufacturing, metal pattern materials, etc., and can solve problems such as poor thermal conductivity of FPC, increased Joule heat generation, and high temperature
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[0034] In one embodiment, a method for preparing an ultra-micro circuit board based on an ultra-thin adhesive-free flexible carbon-based material comprises the following steps:
[0035] S1. Depositing a PI film on the surface of the quantum carbon-based film by CVD chemical vapor deposition reaction to produce a flexible circuit board substrate with a quantum carbon-based film / PI double-layer composite structure;
[0036] S2. Fabricate a high-frequency ultra-micro circuit antenna on the flexible circuit board base material by laser scanning etching method.
[0037]With a flexible carbon-based film as a substrate, a flexible circuit board substrate with a double-layer composite structure of quantum carbon-based film / PI (such as 20 μm / 20 μm) is produced by chemical vapor deposition (CVD) on the quantum carbon-based film , this flexible circuit board base material is an ultra-thin adhesive-free flexible carbon-based material, which can replace the new base material of the traditi...
Embodiment 1
[0091] Raw materials:
[0092] 3,3’,4,4’-Biphenyltetracarboxylic dianhydride
[0093] m-phenylenediamine
[0094] Nitrogen (carrier / cleaning gas)
[0095] Quantum carbon-based film (thickness: 20μm)
[0096] steam
[0097] instrument:
[0098] CVD vapor deposition device (Finland)
[0099] PEO601 RTA rapid thermal annealing furnace (Germany)
[0100] Preparation steps:
[0101] S1: Argon plasma modification treatment on the surface of the quantum carbon-based film, the steps are as follows:
[0102] (1) Place the quantum carbon-based film in acetone solution or absolute ethanol, clean it with ultrasonic waves, and then vacuum dry it in a vacuum drying oven;
[0103] (2) Argon plasma treatment is carried out after the treatment is completed, the plasma treatment power is 70W, the working pressure is 70Pa, and the treatment time is 15min;
[0104] (3) After the surface of the quantum carbon-based film is modified by plasma, then chemical treatment is used to graft on th...
Embodiment 2
[0114] The difference from Example 1 is that this is PI prepared from monomer raw materials 2,3,3',4'-diphenyl ether tetraacid dianhydride and 3,3'-diaminodiphenyl ether in quantum carbon CVD vapor deposition on the surface of the base film, the deposition cycle and reaction conditions are: 2,3,3',4'-diphenyl ether tetraacid dianhydride gas pulse (deposition temperature: 170 ° C, pulse time: 3.0s)-N 2 (Purge time: 1.5-3.0s)-3,3’-Diaminodiphenyl ether gas pulse (deposition temperature: 150°C, pulse time: 2.0s)-N 2 (Purge time: 1.5-3.0s). All the other are with embodiment 1.
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