Manufacturing method for patterned substrate, patterned substrate and light emitting diode

Abstract

The invention discloses a method of patterning a substrate, the patterned substrate and a light emitting diode. The method comprises a mask lowering stage, a main etching stage and an over-etching stage which are carried out in sequence. In the mask lowering stage, a substrate with a mask formed on the surface is etched according to preset first etching process parameters, and the first etching process parameters meet that the etching rate of the mask is larger than that of the substrate so as to lower the height of the mask. In the main etching stage, the substrate subjected to the mask lowering stage is etched according to a preset second etching process parameter so as to improve the included angle between the bottom width and the inflection point of the substrate. In the over-etching stage, the morphology of the substrate subjected to the main etching stage is modified according to preset third etching process parameters to obtain a patterned substrate. According to the method of patterning the substrate, the process time can be effectively shortened, and the production capacity is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a patterned substrate, a patterned substrate and a light emitting diode. Background technique [0002] PSS (Patterned Sapphire Substrates) is a patterned substrate technology, which is a commonly used method to improve the light efficiency of GaN-based LED devices, that is, to grow a dry etching mask on a sapphire substrate, using standard light The etching process etches the mask into a pattern, etches the sapphire by using the ICP etching technique, removes the mask, and then grows GaN material on it, so that the vertical epitaxy of the GaN material becomes the horizontal epitaxy. This method can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active region, reducing the reverse leakage current, and improving the life of the LED. The light emitted from the...

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Problems solved by technology

[0003] In the related art, the manufacturing method of PSS patterned substrate generally includes main etching and over etching. During the main etching process, the photoresist coated on the substrate is often relatively high, about 3.5 μm-3.8 μm , the bottom width is about 1.8 μm to 1.9 μm. In this way, due to the high photoresist, the by-products of PSS etching are difficult to exclude, resulting in slow substrate etching, which greatly increases the process time of patterned substrates.

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