Methods for detecting defects in depth features by using laser-enhanced electron tunneling effects
A deep feature and laser technology, applied in the field of defect inspection, can solve the problems of inability to detect, inability to distinguish under-etched defects of the lower stacked layer substrate, etc.
Active Publication Date: 2020-03-10
YANGTZE MEMORY TECH CO LTD
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[0005] However, due to the presence of a sacrificial layer that covers the lower stacked substrate and does not allow electrons to pass through, the conventional EBI process can neither detect nor distinguish underetched defects of the lower stacked layer substrate.
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[0024] Reference will now be made in detail to the exemplary embodiments of the present invention, which are illustrated in the accompanying drawings, in order to facilitate understanding and practice of the present disclosure and to achieve the described technical effects. It should be understood that the following description is made by way of example only, and does not limit the present disclosure. Various embodiments of the present disclosure and various features in the embodiments can be combined and rearranged in various ways as long as they are not contradictory to each other. Without departing from the spirit and scope of the present disclosure, modifications, equivalents or improvements to the present disclosure would be understandable to those skilled in the art and are intended to be included within the scope of the present disclosure.
[0025] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some...
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Abstract
A method for detecting defects in depth features, such as channel holes, via holes, or trenches, based on a laser-enhanced electron tunneling effect is proivded. A substrate having a film stack layerthereon is provided. First and second depth features are formed in the film stack layer. The first depth feature has a sacrificial oxide layer disposed at a bottom thereof. The second depth feature includes an underetch defect. The sacrificial oxide layer has a thickness of less than 50 angstroms. The substrate is subjected to a laser-enhanced electron beam inspection process. The substrate is scanned with an electron beam and irradiated with a laser beam. The laser beam induces electron tunneling across the sacrificial protective layer, thereby capturing a bright voltage contrast (BVC) signalcorresponding to the first depth feature, and detecting a dark voltage contrast (DVC) signal corresponding to the second depth feature.
Description
technical field [0001] The present disclosure relates to a defect inspection method. More specifically, the present disclosure relates to a method for detecting defects in deep features (eg, channel holes, via holes, or slot trenches) based on laser-enhanced electron tunneling. Background technique [0002] In the manufacture of semiconductor devices, patterned substrates are inspected for defects, enabling the production of acceptable devices. Various inspection techniques have been developed to capture defects on patterned substrates. One common inspection technique is Electron Beam Inspection (EBI). [0003] EBI is performed by scanning an electron beam over a surface pattern of a device formed on a substrate and collecting secondary electrons emitted from the surface pattern of the scanned device as inspection signals. The signal is processed and represented in gray scale to produce an image of the surface pattern of the scanned device. [0004] During the 3D NAND me...
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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20G01N2223/6116G06T7/0004G06T2207/30148H01J2237/281H01L22/14G01N21/9505H01L21/761
Inventor 聂胜超陈金星任军奇
Owner YANGTZE MEMORY TECH CO LTD