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Silicon-based silver nano surface enhanced substrate and preparation method thereof

A surface-enhanced, silver-nano technology, applied in measuring devices, instruments, and material analysis through optical means, can solve the problems of enhanced Raman spectrum detection with high sensitivity, weak Raman scattering signal intensity, and detection sensitivity limitations. Achieve the effects of stable substrate properties, enhanced Raman spectrum peaks, and low production costs

Inactive Publication Date: 2020-03-13
GUANGZHOU POWER SUPPLY BUREAU GUANGDONG POWER GRID CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the Raman scattering signal intensity is too weak, the low scattering intensity leads to poor signal-to-noise ratio, and the detection sensitivity is limited. Enhanced Raman spectroscopic detection of high-sensitivity issues with profound implications for surface-interface science and spectroscopy

Method used

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  • Silicon-based silver nano surface enhanced substrate and preparation method thereof
  • Silicon-based silver nano surface enhanced substrate and preparation method thereof
  • Silicon-based silver nano surface enhanced substrate and preparation method thereof

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preparation example Construction

[0019] A method for preparing a silicon-based silver nano-surface reinforced substrate includes the following steps:

[0020] Add sodium citrate to the boiling silver nitrate solution to obtain silver sol;

[0021] The silicon wafer is immersed in a concentrated sulfuric acid-hydrogen peroxide mixed solution, heated, kept warm, taken out and immersed in a (3-aminopropyl)trimethoxysilane solution to obtain a silicon substrate;

[0022] The silicon substrate is immersed in the silver sol.

[0023] The above method firstly uses sodium citrate heating reduction method to prepare silver sol. The specific method is: adding the sodium citrate aqueous solution dropwise to the boiling silver nitrate aqueous solution, and continue heating for 1h-2h, after the heating is completed, naturally cool to room temperature to obtain the silver sol.

[0024] Understandably, the cooled silver sol can also be centrifuged and purified, and then stored at 4°C.

[0025] At the same time, the above method also ...

Embodiment 1

[0036] This embodiment provides a silicon-based silver nano-surface reinforced substrate and a preparation method thereof, the steps are as follows:

[0037] 1. Add the sodium citrate aqueous solution dropwise to the boiling silver nitrate aqueous solution, and continue heating for 1 hour, and then cool naturally. The cooled silver sol solution was centrifuged and purified, and stored at 4°C.

[0038] 2. Cut the silicon wafer to a size of about 1cm×1cm, and place them in deionized water and absolute ethanol for 3 minutes to remove impurities on the silicon surface, and then dry them with nitrogen. Put the silicon wafers with impurities removed in the "piranha" lotion [V(H 2 SO 4 ):V(30%H 2 O 2 )=7:3], heat to 80°C and keep for 20min. During this process, a layer of hydroxyl is attached to the surface of the silicon wafer. The hydroxylated silicon wafer is immersed in a 5% mass fraction of APTMS [(3-aminopropyl)trimethoxysilane] ethanol solution, and placed for 5 hours to hydrolyze...

Embodiment 2

[0043] This embodiment provides a silicon-based silver nano-surface reinforced substrate and a preparation method thereof, the steps are as follows:

[0044] 1. Add the sodium citrate aqueous solution dropwise to the boiling silver nitrate aqueous solution, and continue heating for 30 minutes, and then cool naturally. The cooled silver sol solution was centrifuged and purified, and stored at 4°C.

[0045] 2. Cut the silicon wafer to a size of about 1cm×1cm, and place them in deionized water and absolute ethanol for 3 minutes to remove impurities on the silicon surface, and then dry them with nitrogen. Put the silicon wafers with impurities removed in the "piranha" lotion [V(H 2 SO 4 ):V(30%H 2 O 2 )=7:3], heating to 80°C and cooling at room temperature, this process attaches a layer of hydroxyl groups on the surface of the silicon wafer. The hydroxylated silicon wafer is immersed in a 5% mass fraction of APTMS[(3-aminopropyl)trimethoxysilane] ethanol solution, and placed for 2h, s...

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Abstract

The invention relates to a silicon-based silver nano surface enhanced substrate and a preparation method thereof. The preparation method comprises the following steps: adding sodium citrate into a boiling silver nitrate solution to obtain silver sol; immersing a silicon wafer into a concentrated sulfuric acid-hydrogen peroxide mixed solution, carrying out heating, preserving the heat, taking out the silicon wafer, and immersing the silicon wafer into a (3-aminopropyl)trimethoxysilane solution to obtain a silicon substrate; and immersing the silicon substrate into the silver sol. The prepared substrate has very strong Raman enhancement capability, and silver nanoparticles are evenly distributed on the substrate.

Description

Technical field [0001] The invention relates to the technical field of Raman detection, in particular to a silicon-based silver nano-surface enhanced substrate and a preparation method thereof. Background technique [0002] Raman spectroscopy belongs to the category of molecular rotation and vibration spectra, which can reflect the characteristic structure of molecules. Since the 1960s, the rapid development of a series of technologies such as lasers, spectrometers, detectors and computers has driven the research of Raman spectroscopy, which has greatly optimized the detection environment of Raman spectroscopy. Raman spectroscopy technology has become an important part of modern analysis technology because of its advantages such as carrying rich material information, non-destructive testing, and no sample preparation. However, the Raman scattering signal intensity is too weak, and the lower scattering intensity leads to poor signal-to-noise ratio and limited detection sensitivit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 朱晨乔胜亚李光茂杨森刘宇陈莎莎邓剑平张宇
Owner GUANGZHOU POWER SUPPLY BUREAU GUANGDONG POWER GRID CO LTD