Infrared chalcogenide glass lens and preparation method thereof
A technology of chalcogenide glass and glass substrate, which is applied in the direction of optical components, optics, instruments, etc., can solve the problems of unsatisfactory waterproof performance of glass lenses, and achieve improved surface hardness and waterproof performance, high transmittance, and reduced wear effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0029] The present invention also proposes a method for preparing infrared chalcogenide glass lenses, which is used to prepare the above-mentioned infrared chalcogenide glass lenses. The preparation method includes the following steps: firstly, the glass substrate is placed in a coating machine, and the coating machine is vacuumed 1. Baking and heating the glass substrate, ion-cleaning the glass substrate, vapor-depositing an MgO coating, a first Ge coating, a first ZnS coating, a second Ge coating, and a second ZnS coating on the surface of the glass substrate in sequence, When the temperature of the glass substrate drops to 50°C, a superhard waterproof layer is applied.
[0030] In some embodiments of the present invention, the ion source used for ion cleaning is a Kaufmann type ion source. In some embodiments of the present invention, the shielding gas used for ion cleaning is argon, and the flow rate of the shielding gas is: 5-60 sccm / min. In some embodiments of the prese...
Embodiment 1
[0033] The glass substrate material adopted in this embodiment is As 40 Se 60 , put the glass substrate to be coated in an evaporation coating machine, and vacuum the evaporation coating machine until the vacuum degree reaches 3.0×10 -3 After Pa, the glass substrate is baked and heated, the baked heating set temperature is 100°C, and the constant temperature baked heating time is 10min, then the Kaufmann ion source is turned on, and the glass substrate is cleaned by the argon ion source for 5min, and then MgO coating, the first Ge coating, the first ZnS coating, the second Ge coating, and the second ZnS coating are evaporated on the double-sided surface of the glass substrate in sequence. The film thickness of the MgO coating is 5nm, and the film thickness of the first Ge coating is The film thickness of the first ZnS coating layer is 234nm, the film thickness of the second Ge coating layer is 425nm, and the film thickness of the second ZnS coating layer is 1122nm, then turn ...
Embodiment 2
[0035] The glass substrate material that present embodiment adopts is Ge 10 As 40 Se 50 , put the glass substrate to be coated in an evaporation coating machine, and vacuum the evaporation coating machine until the vacuum degree reaches 3.0×10 -3After Pa, the glass substrate is baked and heated, the baked heating set temperature is 70°C, and the constant temperature baked heating time is 20min, then the Kaufmann ion source is turned on, and the glass substrate is cleaned by the argon ion source for 8min, and then MgO coating, the first Ge coating, the first ZnS coating, the second Ge coating, and the second ZnS coating are evaporated on the double-sided surface of the glass substrate in sequence. The film thickness of the MgO coating is 20nm, and the film thickness of the first Ge coating is The film thickness of the first ZnS coating layer is 155nm, the film thickness of the second Ge coating layer is 965nm, and the film thickness of the second ZnS coating layer is 1046nm, ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More