Critical dimension control method and control system

Abstract

The invention provides a critical dimension control method and control system, and the control system comprises a first database which is used for providing the corresponding relation between the development delay time of photoresist and the variation value of the critical dimension, and collecting and storing the actual development delay time of the photoresist on a production line; a variation value calculation unit which is used for obtaining the variation value of the key size of the developed photoresist from the first database according to the actual development delay time; a second database which is used for providing a corresponding relationship between the trimming time and the trimming value; a trimming time calculation unit which is used for obtaining trimming time required by the photoresist from a second database according to the variation value; and a trimming station which is used for trimming the photoresist according to the required trimming time so as to adjust the key size of the photoresist. According to the invention, the variation value of the critical dimension of the photoresist caused by development delay and the required corresponding trimming time can beautomatically calculated, and the trimming station is set to trim the photoresist, so that the stability control of the critical dimension is realized.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a control method and a control system for critical dimensions. Background technique [0002] In semiconductor manufacturing technology, photolithography is a commonly used manufacturing process, through which various device patterns and line widths can be defined. Photolithography steps generally include: photoresist coating, drying, exposure, baking and development. The quality of photolithography has an important impact on the performance and yield of semiconductor devices. [0003] With the continuous development of ultra-large integrated circuits, the circuit design becomes more and more complex, the feature size becomes smaller and smaller, and the impact of the feature size of the circuit on the performance of the device is also increasing. As photoresist is an important medium for transferring circuit patterns to silicon wafers, the critical dimensio...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a control method and control system for critical dimensions, which are used to solve the delay from exposure to baking of amplified photoresists, because stress and photoacid reaction cause critical dimensions. The size becomes larger, which leads to the problem that the accuracy of key dimensions is reduced

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