A kind of preparation method of vox gating tube with novel structure and material

Abstract

The invention discloses a method for preparing a VOx gating tube with a novel structure and material, comprising the following steps: S1, providing a semiconductor substrate; S2, depositing a first metal electrode layer; S3, preparing an electric heat insulation layer; S4, engraving Etching the small hole; S5, sequentially filling the small hole with a silver conductive medium layer, a chalcogenide material layer and a VOx material layer; S6, preparing a second metal electrode layer. When a voltage or current is applied to the gating tube, silver diffuses into the chalcogenide material layer, which can form a conductive filament in the chalcogenide material, which makes the current flow only through the conductive filament and inhibits the current in other areas. The wire is very thin, which can locally heat the VOx material, so that part of the VOx material can be transformed from an insulating state to a metallic state, so that the gate tube can be turned on, which can significantly reduce the threshold voltage or threshold current of the gate tube, and can increase the selectivity. The off-state resistance of the pass tube can significantly improve the switching ratio of the device and better suppress the leakage current of the device.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and in particular relates to a preparation method of a VOx gating tube with a novel structure and material. Background technique [0002] Two-terminal nonvolatile memory uses two-terminal gate devices to suppress leakage current problems that are widespread in large-scale arrays. The gating tube device is a switching device, and its working principle is: before reaching the turn-on voltage / current, the gating tube is in the off state, and the resistance is very high, which can effectively suppress the leakage current; The extremely low resistance provides sufficient operating current for the corresponding memory cell. In a large-scale array, the gate is connected to the memory unit. When operating the memory unit, first apply voltage or current to open the gate connected to the selected unit, and then perform read and write operations on the selected memory unit. Wherein, the gat...

AI Technical Summary

Problems solved by technology

[0004] The advantage of this kind of gating tube is that it can provide a relatively large driving current, and the electrical stability of the device is relatively good, but its biggest disadvantage is that the leakage current of the device is usually relatively large and the switching ratio is small, and the V element and O The ratio of elements has a great influence on the performance of the VOx gate tube. Usually, in order to obtain a material with a suitable composition ratio, after the preparation of the VOx material layer, it needs to be annealed. The annealing temperature is generally around 500°C. Now The three-dimensional memory strictly requires that the device preparation temperature is lower than 400°C, otherwise the subsequent preparation process will destroy the previously prepared fine structure, which makes the preparation process of the VOx gate tube incompatible with it

Images