High extinction ratio coarse wavelength division multiplexer/demultiplexer based on multimode interference principle
A demultiplexer and wavelength division multiplexing technology, applied in the field of semiconductor optoelectronics, which can solve the problems of simultaneous demultiplexing of TE and TM modes without considering it, and achieve the effects of high extinction ratio, small optical signal crosstalk, and short device length.
Active Publication Date: 2020-03-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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However, there are no reports on devices that satisfy high extinction ratio and polarization insensitivity at the same time, and most of the designs do not consider the simultaneous splitting of TE and TM modes
That is to say, there is no device in the prior art that can satisfy both high extinction ratio and polarization insensitivity
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[0058] see figure 1 and figure 2 As shown, the embodiments of the present invention provide a polarization-insensitive high extinction ratio coarse wavelength division multiplexer / demultiplexer based on the principle of multimode interference. It is 1 micron, and based on the theory of multimode interference, it is composed of five multimode interference couplers. Invented devices specifically include:
[0059] A substrate 1, which is an n-type Si substrate;
[0060] A silicon dioxide oxide layer 2, which is fabricated on the substrate 1;
[0061] Wherein, the silicon dioxide oxide layer 2 has a refractive index of 1.44 corresponding to light waves of 1.3 microns and 1.5 microns, which is greatly different from that of bulk silicon. Therefore, this layer is a cladding layer that isolates the light field, and completely limits the light field to the upper layer. The waveguide layer will not leak into the Si substrate.
[0062] Bulk silicon lower waveguide layer 3, the bul...
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Abstract
A coarse wavelength division multiplexer / demultiplexer includes: a substrate; a silicon dioxide oxide layer which is positioned on the substrate; a bulk silicon lower waveguide layer which is positioned on the silicon dioxide oxide layer; a silicon nitride waveguide layer which is positioned on the bulk silicon lower waveguide layer; a bulk silicon upper waveguide layer which is positioned on thesilicon nitride waveguide layer, wherein the bulk silicon lower waveguide layer, the silicon nitride waveguide layer and the bulk silicon upper waveguide layer are etched to form a plurality of multimode interference couplers. The multiplexer comprises a 1.31 micron / 1.55 micron light wave multiplexing / demultiplexing unit, a collecting unit and a filtering unit, the input end of the collecting unitis connected with the multiplexing / demultiplexing unit, and the input end of the filtering unit is connected with the output end of the multiplexing / demultiplexing unit. The multiplexing / demultiplexing device can form reconverged mirror image points at different positions, so that two beams of light waves can be separated and collected at different positions, and the multiplexing / demultiplexing device is small in optical signal crosstalk and high in extinction ratio.
Description
technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a high extinction ratio coarse wavelength division multiplexer / demultiplexer based on the principle of multimode interference. Background technique [0002] In high-speed optical communication systems, wavelength division multiplexing technology is widely used, and provides a large number of communication channels and huge communication capacity for people. The technology of transmitting multiple wavelengths at a certain interval at the same time and communicating through multiplexing and demultiplexing is called wavelength division multiplexing. Wavelength division multiplexing technology is one of the indispensable key technologies in modern communication systems. It can greatly improve the communication capacity of a single communication line. It is used to transmit signals of various wavelengths in wired communication and wireless communication systems. ...
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IPC IPC(8): G02B6/28G02B6/293H04J14/02
CPCG02B6/2813G02B6/29344G02B6/2938H04J14/0202
Inventor 唐强朱旭愿梁松
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI