SoC storage system based on embedded spin transfer torque magnetic random access memory

A spin transfer torque, magnetic random access memory technology, applied in general-purpose stored program computers, architectures with a single central processing unit, instruments, etc., can solve the problems of slow storage speed, etc. Avoid frequent enabling and disabling effects

Active Publication Date: 2020-04-07
HUAZHONG UNIV OF SCI & TECH +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the above defects or improvement needs of the prior art, the present invention provides a SoC storage system based on embedded spin-transfer torque magnetic random access memory, and its purp

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SoC storage system based on embedded spin transfer torque magnetic random access memory
  • SoC storage system based on embedded spin transfer torque magnetic random access memory
  • SoC storage system based on embedded spin transfer torque magnetic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0044] To achieve the above object, the present invention provides a SoC storage system based on embedded spin transfer torque magnetic random access memory, such as figure 1 As shown, including: memory control module 1, eSTT-MRAM2;

[0045] Wherein, the input end of the memory control module 1 is connected to the asynchronous transceiver of the AHB and the host computer, and the output end of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an SoC storage system based on an embedded spin transfer torque magnetic random access memory. The SoC storage system comprises a memory control module and an eSTT-MRAM; the memory control module is used for performing instruction fetching, reading and writing and program downloading operations on the eSTT-MRAM by adopting three groups of memory control signals respectivelyto finish time division multiplexing of the eSTT-MRAM; and the eSTT-MRAM is used for polarizing the current to form a spin current, and transmitting the spin torque to the magnetic torque of the freelayer through spin electrons in the spin current, so that the magnetic torque rotates according to the direction of the spin current, the written information '0' or '1' is realized, and the storage speed is high. The eSTT-MRAM is divided into more functional areas, and functions executed by different types of traditional memories in the SoC are integrated on one eSTT-MRAM, so that a single storage system with more complex functions is realized, the storage speed of the system is greatly increased, and the area of the storage system is reduced.

Description

technical field [0001] The invention belongs to the field of memory applications, and more particularly relates to a system on chip (SoC) storage system based on an embedded spin-transfer torque Magnetic RAM (Embedded Spin-transfer torque Magnetic RAM, eSTT-MRAM). Background technique [0002] The emergence of SoC technology has changed the design concept of traditional embedded systems, and the design technology based on IP core has become the mainstream of embedded system design. One of the advantages of SoC is that it can use a combination of software and hardware to realize various complex functions, and combine the advantages of high efficiency and fast hardware implementation with simple software implementation and low cost, in order to achieve performance and cost. compromise. In SoC, the storage system is the link between hardware and software. The processor reads the program from the storage system and controls the hardware by executing the program. During the exe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F15/78
CPCG06F15/7807
Inventor 刘冬生刘星杰卢楷文张聪刘波
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products