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Method for measuring and characterizing chromatic aberration and winding plating of solar cell

A technology of solar cells and chromatic aberration, which is applied in the field of solar cells and can solve the problems of large judgment errors and inability to obtain results by naked eyes

Inactive Publication Date: 2020-04-07
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: solar cell chromatic aberration and winding plating are only color differences in appearance, there is no quantifiable analysis method to evaluate the improved samples, the error of naked eye judgment is large, and accurate results cannot be obtained

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0027] Select solar cells that have completed the PECVD process on the front side, that is, coat silicon nitride film on the front side of the silicon wafer, with a size of 156.75 mm × 156.75 mm. Use Kyocera-M2135dn all-in-one machine to scan the front side of the cell sheet in full-color scanning mode to obtain a JPEG format image.

[0028] Use ImageJ image processing software to open the obtained picture, and use the straight line function to draw a straight line perpendicular to the edge of the cell in the picture, and the length is exactly equal to the side length of the cell in the picture.

[0029] Use the Set scale function in Analyze in the software, enter 156.75 in the Known distance box, and click the Global button to complete the coordinate calibration of the picture.

[0030] Use the rectangular frame selection function of the software to frame the cell in the picture. It is required that the length of the rectangular frame exceeds the edge of the cell, and the fram...

Embodiment example 2

[0036] Select solar cells that have completed the PECVD process on the front side, that is, coat silicon nitride film on the front side of the silicon wafer. The size is 158.75 mm × 158.75 mm. Use Kyocera-M2135dn all-in-one machine to scan the front side of the cell sheet in full-color scanning mode to obtain a JPEG format picture.

[0037] Use ImageJ image processing software to open the obtained picture, and use the straight line function to draw a straight line perpendicular to the edge of the cell in the picture, and the length is exactly equal to the side length of the cell in the picture.

[0038] Use the Set scale function in Analyze in the software, enter 158.75 in the Known distance box, and click the Global button to complete the coordinate calibration of the picture.

[0039] Use the rectangular frame selection function of the software to frame the cell in the picture. It is required that the length of the rectangular frame exceeds the edge of the cell, and the frame...

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PUM

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Abstract

The invention discloses a method for measuring and characterizing chromatic aberration and winding plating of a solar cell. The method comprises the steps of obtaining an appearance picture, calibrating the size of the picture, selecting a measurement area, generating measurement data, processing the measurement data and the like, the method can rapidly and accurately measure the chromatic aberration and the winding plating of the solar cell, an output result is in a digital form, statistical analysis is facilitated, and personal errors and interference judgment caused by measurement of a traditional method are avoided.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for measuring and characterizing the chromatic aberration and winding plating of solar cells. Background technique [0002] At present, the PECVD method is mainly used to deposit the SiNx film on the front and back of the solar cell. In the tubular PECVD method, the graphite boat is used as the carrier, and the graphite sticking point is used to restrict the silicon wafer in the graphite cavity, and only one side of the silicon wafer is allowed to be exposed. In the process atmosphere of the graphite cavity, but in practice, in order to ensure that the silicon wafer is inserted into the graphite stuck point smoothly and the silicon wafer cannot be scratched, the gap size of the graphite stuck point will be larger than the thickness of the silicon wafer; during the coating process, Due to the expansion of the silicon wafer due to heat, it cannot fully maintain the s...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L31/18H01L31/04
CPCH01L22/12H01L31/18H01L31/04Y02E10/50Y02P70/50
Inventor 姜泽光林纲正陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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