Manufacturing method of floating gate type flash memory

A manufacturing method and floating gate technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., and can solve the problems that floating-gate flash memory is susceptible to interference

Pending Publication Date: 2020-04-21
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a method for manufacturing a floating gate flash memory, so ...

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  • Manufacturing method of floating gate type flash memory
  • Manufacturing method of floating gate type flash memory
  • Manufacturing method of floating gate type flash memory

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Embodiment Construction

[0027] The manufacturing method of the floating gate flash memory proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] figure 1 It is a schematic flowchart of a manufacturing method of a floating gate flash memory according to an embodiment of the present invention. Such as figure 1 As shown, an embodiment of the present invention relates to a method for manufacturing a floating gate flash memory, including:

[0029] A semiconductor substrate is provided, the semiconductor substrate has a field oxygen isolation and a plurality of active regions defined by ...

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Abstract

The invention provides a manufacturing method of a floating gate type flash memory. The method comprises the steps: providing a semiconductor substrate, wherein the semiconductor substrate comprises asource electrode forming region and a drain electrode forming region which are separated by control grid lines; performing shallow doping ion implantation on the semiconductor substrate of the drainelectrode forming region, and then performing source electrode self-alignment etching to remove field oxygen in field oxygen isolation between adjacent control grid lines; and perform thermal oxidation treatment on the semiconductor substrate. The movement of ions injected by shallow doping is intensified in the thermal oxidation treatment process, the distribution uniformity of the ions in the drain electrode forming region is improved, and the current distribution of the drain electrode of the floating gate type flash memory can be more uniform so that the current distribution of different bit lines is converged, the distribution of the threshold voltage is also converged, and the threshold voltage is not liable to be interfered when the floating gate type flash memory is written, thereby improving the anti-interference capability of the floating gate type flash memory writing.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a floating gate flash memory. Background technique [0002] Flash Memory (Flash Memory) is a non-volatile (Non-Volatile) memory that can still maintain the stored data information in the case of power failure. Flash memory does not require a special high voltage during electrical erasure and reprogramming, and has the characteristics of low manufacturing cost and high storage density, making it the mainstream of non-volatile semiconductor storage technology. Its unique performance makes it widely used in various fields, including embedded systems, such as telecommunication switches, cellular phones, network interconnection equipment, instrumentation and automotive devices, as well as emerging voice, image, and data storage products. [0003] With the development of semiconductor device technology, the performance requirements of flash memory devi...

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Application Information

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IPC IPC(8): H01L27/11521H01L21/324H01L21/336
CPCH01L29/66825H01L21/324H10B41/30
Inventor 秦佑华陈昊瑜王奇伟顾珍
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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