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Damascene thin-film resistor (TFR) in poly-metal dielectric and method of fabrication

A thin film resistor, polysilicon technology, applied in the direction of resistors, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as copper interconnect manufacturing

Pending Publication Date: 2020-04-21
MICROCHIP TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, copper interconnects are often difficult to fabricate with the traditional photoresist masking and plasma etching used for aluminum interconnects

Method used

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  • Damascene thin-film resistor (TFR) in poly-metal dielectric and method of fabrication
  • Damascene thin-film resistor (TFR) in poly-metal dielectric and method of fabrication
  • Damascene thin-film resistor (TFR) in poly-metal dielectric and method of fabrication

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Embodiment Construction

[0017] Embodiments of the present disclosure provide damascene TFRs formed within polysilicon-metal dielectric (PMD) layers using a single added masking layer, and methods for fabricating such TFR devices.

[0018] image 3 An exemplary IC structure 100 is shown including a thin film resistor (TFR) 102 formed in accordance with one embodiment of the present disclosure. A single added masking layer can be used, e.g. according to the reference below Figures 4A-4K In the example damascene approach discussed, the TFR 102 is formed within a polysilicon-metal dielectric (PMD) layer. As shown, TFR 102 extends between a pair of TFR headers 104 formed on field oxide 110 . Each TFR header 104 may include a polysilicon region 106 having a silicide contact layer 106 formed on the polysilicon region 108, for example using a salicide (salicide) method, as described below. A conductive TFR via 112 may be connected to each suicide contact 106 . In the illustrated example, TFR 102 may be ...

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Abstract

A damascene thin-film resistor (TFR), e.g., a damascene thin-film resistor module formed within a poly-metal dielectric (PMD) layer using a single added mask layer, and a method for manufacturing sucha device, are disclosed. A method for manufacturing a TFR structure may include forming a pair of spaced-apart TFR heads formed as self-aligned silicide poly (salicide) structures, depositing a dielectric layer over the salicide TFR heads, patterning and etching a trench extending laterally over at least a portion of each salicide TFR head and exposing a surface of each salicide TFR heads is exposed, and depositing a TFR material into the trench and onto the exposed TFR head surfaces, to thereby form a TFR layer that bridges the pair of spaced-apart TFR heads.

Description

[0001] Related Patent Applications [0002] This patent application claims priority to commonly owned U.S. Provisional Patent Application No. 62 / 569,261, filed October 6, 2017, which is hereby incorporated by reference in its entirety for all purposes. technical field [0003] The present disclosure relates to a damascene thin film resistor (TFR), in particular to a damascene TFR module formed within a polysilicon-metal dielectric (PMD) layer using a single added mask layer, and methods for fabricating such a device . Background technique [0004] Semiconductor integrated circuits (ICs) typically include metallization layers used to connect various components of the IC, known as interconnects, or back-end-of-line (BEOL) elements. Copper is generally preferred over aluminum due to its lower resistivity and high electromigration resistance. However, copper interconnects are often difficult to fabricate by conventional photoresist masking and plasma etching used for aluminum ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L49/02H01L23/522H10N97/00
CPCH01L23/5228H01L28/24H01L21/76807H01L21/76804H01L21/76802H01L21/76805H01L23/53214H01L23/53228
Inventor Y·冷
Owner MICROCHIP TECH INC
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