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A kind of guide tube device and crystal pulling furnace

A technology of guide tube and guide wall, which is applied in the field of guide tube devices and crystal pulling furnaces, can solve the problems of high integrated circuit potential impact, crystal ingot quality, etc., to avoid void defects, improve crystal ingot quality, Suppresses the effect of supersaturation

Active Publication Date: 2022-06-07
XIAN ESWIN MATERIAL TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But too high v / G 0 The value will also lead to a lot of void-type defects in the ingot. These void-type defects are caused by the supersaturation of vacancies, which will affect the quality of the ingot, which will affect the potential of silicon wafers to manufacture complex high-integration circuits. have a great impact

Method used

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  • A kind of guide tube device and crystal pulling furnace
  • A kind of guide tube device and crystal pulling furnace
  • A kind of guide tube device and crystal pulling furnace

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Embodiment 1

[0034] The formation of void-type defects usually goes through two processes. First, during the cooling process of the ingot, with the increase of the distance from the solid-liquid interface, the supersaturation of vacancies increases gradually. When the supersaturation reaches a certain value at a certain temperature, The vacancies aggregate to nucleate and then grow through vacancy diffusion. Since the migration rate of vacancies decreases with the decrease of the ingot temperature, the characteristic temperature range Tn for the rapid nucleation and growth of vacancy-type defects due to the aggregation reaction of vacancy-type intrinsic defects is approximately 1100-1070℃. Determines the size of the void-type defect. When the temperature is greater than Tn, the nucleation rate of void-type defects is very small; in the Tn temperature range, the nucleation rate of void-type defects is very large; when the ingot temperature is lower than Tn, the nucleation rate of void-type ...

Embodiment 2

[0060] See figure 1 and figure 2 , this embodiment further provides a crystal pulling furnace on the basis of the above-mentioned embodiment. The crystal pulling furnace is used to manufacture the crystal rod 70, and includes: a furnace body 40, and the furnace body 40 includes a guide tube device 10 and a heat preservation cover 20. , pressure ring 30, heater 50, quartz crucible 60; furnace body 40 is fed with inert gas 90 from top to bottom; The design can make the inert gas 90 pass into the crystal pulling furnace from the auxiliary chamber. During the process of the inert gas 90 flowing from the ingot 70 to the melt 80, when it moves to the diameter reducing device 102 of the guide tube device 10, due to the airflow The channel becomes smaller, so that the flow rate of the inert gas 90 when flowing through the diameter reducing device 102 is increased, so that the ingot 70 at this height can be centrally cooled.

[0061] It should be understood that other devices of the...

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Abstract

The invention discloses a guide tube device, which comprises a guide tube body and a diameter reducing device, both of which are provided with a guide channel, and the diameter reducing device surrounds the guide tube body and is attached to the guide tube On the inner wall of the barrel body, and the height of the guide wall of the diameter reducing device is greater than or equal to the height of the section of the ingot to be cooled. The diameter reducing device of the present invention is arranged on the inner wall of the guide tube body. When the inert gas is passed into the furnace of the crystal pulling furnace, when the inert gas moves to the diameter reducing device, due to the existence of the diameter reducing device, the air flow channel will becomes smaller, so that the flow rate of the inert gas at the diameter reducing device increases, so that the ingot at this height can be cooled intensively. At the same time, if the height of the diameter reducing device coincides with the height of the characteristic temperature range of the ingot , can effectively suppress the supersaturation of vacancy-type intrinsic defects, thereby effectively avoiding large-sized void-type defects in the ingot, and finally achieving the effect of improving the quality of the ingot.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a guide tube device and a crystal pulling furnace. Background technique [0002] Single crystal silicon is now the base material for most semiconductor components, and the vast majority of single crystal silicon is prepared by the "Czochralski method (Czochralski method)." In this method, the polycrystalline silicon material is melted in a quartz crucible. During the Czochralski single crystal process, the seed crystal and the melt are first brought into contact, so that the molten silicon at the solid-liquid interface cools and crystallizes along the seed crystal, and slowly pulls out Seed crystal growth. After necking is completed, the crystal growth diameter is enlarged by reducing the pulling rate and / or melt temperature until the target diameter is reached; "stage. Finally, by increasing the pulling speed and increasing the melt temperature, the diameter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 杨帅军雷卫娜阴俊沛惠聪王腾
Owner XIAN ESWIN MATERIAL TECH CO LTD
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