Bipolar triode based on two-dimensional material/gallium nitride and preparation method of bipolar triode
A bipolar triode, two-dimensional material technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficulty in obtaining P-type doping
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Embodiment 1
[0026] Embodiment 1: This embodiment provides a WSe-based 2 Bipolar transistor and its preparation method
[0027] like figure 1 As shown, it is a schematic diagram of the transistor structure. The triode structure is a GaN-based substrate 1 from bottom to top, a first N-type doped III-nitride layer 2 with a thickness of 50 nm, and a P-type doped WSe layer with a thickness of 10 nm. 2 Layer 3, a second N-type doped Group III nitride layer 4 with a thickness of 1um; the first N-type doped Group III nitride layer 2 is a collector region; the P-type doped WSe 2 Layer 3 is the base region, and the second N-type doped Group III nitride layer 4 is the emitter region; the bottom of the first N-type doped Group III nitride layer 4 is deposited with a collector 5, and the second N-type An emitter 7 is deposited on the doped III-nitride layer 4, and the P-type doped WSe 2 Base 6 is deposited on layer 3 .
[0028] like figure 2 Shown, for this transistor preparation method, compris...
Embodiment 2
[0035] Embodiment 2: This embodiment provides a MoTe-based 2 Bipolar Transistor Fabrication Method
[0036] An initial GaN-based substrate 1 is provided, the substrate doping is heavy N-type doping, and the doping concentration is 10 20 cm -3 , the substrate is a silicon epitaxial gallium nitride layer;
[0037]On the heavily N-type doped GaN-based substrate 1, a layer of weakly N-doped GaN layer is formed by epitaxial technology as the withstand voltage region of the collector region, and the doping concentration is 10 16 cm -3 ;
[0038] A layer of P-doped MoTe deposited on weakly N-doped GaN 2 layer with a doping concentration of 10 19 cm -3 ,MoTe 2 The deposition of the layer adopts chemical vapor deposition method;
[0039] In MoTe 2 A layer of heavily N-doped gallium nitride is deposited on it, with a doping concentration of 10 20 cm -3 , deposited by physical vapor deposition method, after deposition, photolithography and etching are performed to define the ...
Embodiment 3
[0041] Embodiment 3: This embodiment provides another WSe-based 2 Bipolar Transistor Fabrication Method
[0042] A starting AlGaN substrate 1 is provided, the substrate doping is heavy N-type doping, and the doping concentration is 10 20 cm -3 ;
[0043] On the heavily N-type doped GaN-based substrate 1, a weakly N-type doped AlGaN layer is formed by an epitaxial process as the withstand voltage region of the collector region, and the doping concentration is 10 15 cm -3 ;
[0044] Deposit a layer of P-type doped WSe on the weakly N-doped AlGaN layer 2 layer with a doping concentration of 10 20 cm -3 ,MoS 2 The deposition of the layer adopts chemical vapor deposition method;
[0045] in WSe 2 A heavily N-doped AlGaN layer is deposited on the layer with a doping concentration of 10 19 cm -3 , deposited by physical vapor deposition method. After deposition, photolithography and etching are performed to define the top AlGaN layer emission region and expose the underly...
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