Wafer bond breaking strength detecting method
A detection method and wafer technology, applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of destructive inspection methods and measurement methods that are not flexible enough, convenient, and large degree errors, etc., and achieve high sensitivity , improve the bonding quality, the effect of simple operation
Inactive Publication Date: 2020-04-28
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology
The Czochralski method is widely used in the bond strength measurement of the bonding sheet, which is expressed by the maximum pulling force that pulls the bonding sheet apart, but this method is subject to many restrictions such as pulling force, handle, adhesive, etc. The measurement method is not flexible enough, convenient, and it is also a destructive inspection method
The crack propagation method, also known as the blade method, uses a blade to insert along the bonding interface and observe the fracture depth to reflect the bonding strength. This method is simple to operate and has little damage to the bonding sheet, but the degree error is large
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[0022] As mentioned in the background, existing bonding processes do not work well.
[0023] Figure 1 to Figure 7 It is a structural schematic diagram of each step of a wafer bonding method.
[0024] Please refer to figure 1 , providing a first wafer 101 and a second wafer 102, the first wafer 101 has a first dielectric layer 111 on its surface, and the second wafer 102 has a second dielectric layer 112 on its surface.
[0025] Please refer to figure 2 and image 3 , image 3 Yes figure 2 The enlarged view of the second dielectric layer 112 in the region A shown in , respectively performs plasma treatment on the surface of the first dielectric layer 111 and the surface of the second dielectric layer 112 .
[0026] Please refer to Figure 4 and Figure 5 , Figure 5 Yes Figure 4 The enlarged view of the area B of the second dielectric layer 112 shown in , after the plasma treatment, activation treatment is performed on the surface of the first dielectric layer 111...
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Abstract
The invention discloses a wafer bond breaking strength detecting method. The detection method comprises the following steps that: a first wafer is provided; bond breaking treatment is performed on thesurface of the first wafer, so that the surface of the first wafer can have a first group; a trapping agent is added to the surface of the first wafer, so that the first group on the surface of the first wafer can react with the trapping agent to form a reaction product; the reaction product is detected, so that the chemical emission intensity of the reaction product can be obtained; and first group concentration in the reaction product can be obtained according to the chemical emission intensity. The detection method is simple to operate and high in sensitivity, and can quickly obtain the strength condition of a broken bond on the surface of the first wafer.
Description
technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a detection method for wafer bond breaking strength. Background technique [0002] Bonding is an indispensable technology in the semiconductor manufacturing process, and is widely used in precision manufacturing processes, especially in the mechanical and electrical connections of electronic products. Bonding technology refers to bonding two polished silicon wafers together after chemical cleaning, and then undergoing high-temperature annealing treatment, physical and chemical reactions occur at the interface to form a chemical bond connection. [0003] In a semiconductor manufacturing process such as a back-illuminated image sensor manufacturing process, it is necessary to bond two or more wafers together and measure the bonding force between the bonded wafers. At present, the bond strength measurement has the Czochralski method and the crack propagation metho...
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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/30
Inventor 刘博佳王海宽郭松辉林宗贤
Owner HUAIAN IMAGING DEVICE MFGR CORP