Laser diode and manufacturing method thereof

Abstract

The invention discloses a laser diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The laser diode comprises a substrate, an epitaxial layer, an N-type electrode, a P-type electrode, a first reflecting layer and a second reflecting layer, wherein the epitaxial layer comprises a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer; the surface of the P-type semiconductor layer is of a ridge waveguide structure; the P-type semiconductor layer is provided with a first groove and a second groove; the P-type semiconductor layer and the active layer form a cylinder structure, wherein the side surface of the cylinder structure comprises a first curved surface, a first plane, a second curved surface and a secondplane; the first plane and the second plane are parallel to the extending direction of a ridge in the ridge waveguide structure, and the curvature of points on the first curved surface and the secondcurved surface is firstly reduced to 0 in the direction from the first plane to the second plane, then kept to 0 and finally increased from 0; and the first reflecting layer and the second reflectinglayer are laid on the first curved surface and the second curved surface respectively. The light emitting efficiency of the laser diode can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a laser diode and a manufacturing method thereof. Background technique [0002] A laser diode (English: Laser diode, referred to as: LD) includes a substrate, a semiconductor layer with a PN junction, and two reflective layers with different reflectivity. The two reflective layers are arranged on the substrate to form a resonant cavity. The semiconductor layer is set On the substrate and between the two reflective layers, the surface of the semiconductor layer is a ridge waveguide structure, and the extending direction of the ridge in the ridge waveguide structure is perpendicular to the opposite surfaces of the two reflective layers. [0003] Under the action of an applied voltage, the electrons and holes in the PN junction recombine to release photons, and the photons hit the atoms, causing more photons to be released. Under the action of the ridge waveguide st...

AI Technical Summary

Problems solved by technology

The opposite surfaces of the existing two reflective layers are planes perpendicular to the beam irradiation direction. After the divergent light in the beam is reflected on the reflective layer, it is easy to escape from the resonant cavity, which affects the oscillation in the resonant cavity and reduces the output of the laser diode. efficiency

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