Millimeter-wave ultra-wideband high-gain low-power-consumption low-noise amplifier chip circuit

A high-gain, ultra-wideband technology, applied in the direction of improving amplifiers to expand bandwidth and improving amplifiers to reduce noise impact, etc. The effect of solving noise deterioration, good standing wave, low noise

Pending Publication Date: 2020-05-05
CHENGDU GANIDE TECH
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the existing millimeter-wave amplifiers cannot have broadband, low noise, hi

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  • Millimeter-wave ultra-wideband high-gain low-power-consumption low-noise amplifier chip circuit

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Embodiment Construction

[0023] Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be understood that the implementations shown and described in the drawings are only exemplary, intended to explain the principle and spirit of the present invention, rather than limit the scope of the present invention.

[0024] An embodiment of the present invention provides a millimeter-wave ultra-wideband high-gain low-power consumption low-noise amplifier chip circuit, such as figure 1 As shown, it includes transistor M1, transistor M2, transistor M3 and transistor M4; the source of transistor M1 is connected to the self-bias network of M1 tube, and its gate is connected to the output terminal of the input matching network, and the input terminal of the input matching network is a millimeter wave The RF input terminal RFIN of the ultra-broadband high-gain low-power low-noise amplifier chip circuit; the source of the transistor M2 is c...

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Abstract

The invention discloses a millimeter-wave ultra-wideband high-gain low-power-consumption low-noise amplifier chip circuit. A mode of combining a cascode structure and a current multiplexing structureis adopted; the two structures are connected through a matching network; according to the millimeter wave amplifier, the working bandwidth of the millimeter wave amplifier is effectively improved, signals can be amplified for multiple times, the gain is improved. Meanwhile, low power consumption is achieved, especially in the millimeter wave frequency band, the problems of gain abrupt drop and noise deterioration are effectively solved, power output in the amplifier can be achieved, and meanwhile low power consumption is achieved. According to the invention, the amplifier can integrate variousexcellent performances such as high gain, low noise, medium power output, low power consumption, good standing wave and the like in an ultra-wideband millimeter wave frequency band, so that the performance of application fields such as electronic countermeasure equipment, a wideband high-speed communication system, a millimeter wave high-end measuring instrument and the like is expected to be improved.

Description

technical field [0001] The invention belongs to the technical field of microwave monolithic integrated circuits, and in particular relates to the design of a millimeter-wave ultra-broadband high-gain low-power consumption low-noise amplifier chip circuit. Background technique [0002] The millimeter wave low noise amplifier circuit is the front stage circuit of the millimeter wave receiver, its performance is directly related to the noise performance of the whole machine, and affects the sensitivity of the whole system. Millimeter-wave amplifiers with broadband, low noise, high gain and low power consumption are the difficulties that restrict high-performance millimeter-wave receiver systems. [0003] In order to increase the gain, the traditional circuit design method is to directly cascade multiple transistors, but the working current of multiple transistors cascaded is the sum of several transistors, so the power consumption is large; and the working bandwidth of multiple...

Claims

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Application Information

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IPC IPC(8): H03F1/42H03F1/26
CPCH03F1/26H03F1/42
Inventor 叶珍滑育楠刘莹吕继平陈依军
Owner CHENGDU GANIDE TECH
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