Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Room-temperature high-frequency terahertz wave detector and preparation method thereof

A terahertz and detector technology, applied in the field of terahertz wave detection research, can solve the problems of carrier mobility reduction, lack of design of 2-5THz high-frequency terahertz antenna structure, and inability to effectively use high mobility characteristics. , to meet the effect of high sensitivity

Pending Publication Date: 2020-05-08
江苏盖姆纳米材料科技有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The mainstream terahertz antenna structure designed and used at this stage is concentrated in the 0.1-1THz frequency band (bowie antenna, logarithmic periodic scalloped antenna, etc.), lacking the design of the 2-5THz high-frequency terahertz antenna structure, which cannot effectively couple high-frequency Hertz band
The interface problems and scattering centers introduced by the preparation process have greatly reduced the carrier mobility of high-mobility two-dimensional materials used for terahertz detection, and cannot effectively utilize their high-mobility characteristics, thus making it impossible to achieve high-sensitivity, high-frequency Terahertz detection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Room-temperature high-frequency terahertz wave detector and preparation method thereof
  • Room-temperature high-frequency terahertz wave detector and preparation method thereof
  • Room-temperature high-frequency terahertz wave detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0034] Such as figure 1 , 2 As shown, a room-temperature high-frequency terahertz wave detector in this embodiment includes a high-carrier mobility two-dimensional material 1, a high-carrier mobility field-effect transistor and a high-frequency terahertz antenna 3. The carrier mobility field effect transistor has three electrodes: a source electrode 5, a gate electrode 4 and a drain electrode 6, and the three electrodes of the high carrier mobility field effect transistor are connected with a high-frequency terahertz antenna 3, so that the high-carrier mobility The carrier mobility field effect transistor is integrated with the high-frequency terahertz antenna 3 . The upper surface and the lower surface of the high carrier mobility two-dimensional material 1 are respectively coated with a two-dimensional layered dielectric material 2 . Tera...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a room-temperature high-frequency terahertz wave detector and a preparation method thereof, which belong to the technical field of terahertz wave detection research. The room-temperature high-frequency terahertz wave detector comprises a high carrier migration two-dimensional material, a field effect transistor and a terahertz antenna, wherein the field effect transistor comprises a source electrode, a gate electrode and a drain electrode, the source electrode, the gate electrode and the drain electrode are integrated on a substrate with a dielectric layer, and a terahertz antenna is connected with the three electrodes of the field effect transistor; the upper surface and the lower surface of the high carrier mobility two-dimensional material are respectively coated with a two-dimensional layered dielectric material; and terahertz antenna ends connected with the drain electrode and the source electrode are in ohmic contact with the high carrier mobility two-dimensional material, and the terahertz antenna end connected with the gate electrode is in Schottky contact with the high carrier mobility two-dimensional material by means of the two-dimensional layered dielectric material. The room-temperature high-frequency terahertz wave detector effectively couples the high-frequency terahertz waves, avoids the problem that the carrier mobility is reduced whenthe high carrier mobility two-dimensional material is prepared, and achieves effective detection of the high-frequency terahertz waves.

Description

technical field [0001] The invention relates to a room-temperature high-frequency terahertz wave detector and a preparation method thereof, belonging to the technical field of terahertz wave detection research. Background technique [0002] Terahertz (Terahertz) radiation usually refers to electromagnetic waves with a wavelength of 30 μm to 3 mm (0.1 THz to 10 THz), between millimeter waves and infrared waves, and is in the transition zone from electricity to photonics, macroscopic classical theory to microscopic quantum theory . Terahertz waves have the characteristics of high frequency and short pulse time (on the order of picoseconds), so they have high spatial and temporal resolution, and are widely used in terahertz imaging and terahertz spectroscopy. In addition, due to its special properties, such as high transmittance, low energy, fingerprint characteristics and high frequency and high bandwidth characteristics, it is widely used in non-destructive testing, safety t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01J1/02
CPCG01J1/42G01J1/02
Inventor 张凯董卓沈文沈寒松
Owner 江苏盖姆纳米材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products