Czochralski seeding method
A technology of Czochralski method and seed crystal, which is applied in the direction of chemical instruments and methods, self-melt pulling method, crystal growth, etc., can solve the problems affecting the success rate of seeding, large axial temperature difference of fine crystals, unfavorable discharge of dislocations, etc. problem, achieve the effect of saving crystal growth cost, reducing temperature difference and reducing dislocation
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Embodiment 1
[0038] This embodiment provides a Czochralski seeding method, the seeding equipment used in the Czochralski method is as follows: figure 1 As shown, the seeding equipment includes a melt crucible 109, a heater 107 and a heat shield 106, the heater 107 is arranged around the melt crucible 109, and the melt crucible 109 carries a silicon melt 101, The heat shield 106 is disposed above the silicon melt 101 for reflecting heat radiation to the surface of the silicon melt 101 to prevent the heat radiation of the silicon melt 101 from diffusing to the ingot.
[0039] Such as Figure 1 ~ Figure 4 Shown, described Czochralski method seeding method comprises the following steps:
[0040] Such as figure 1 As shown, first carry out step 1), provide a silicon melt 101 and a seed crystal 102, a heat shield 106 is arranged above the silicon melt 101, and the liquid level of the silicon melt 101 is at a position relative to the heat shield 106 The first liquid level position 105 .
[004...
Embodiment 2
[0056] This embodiment provides a Czochralski seeding method, the seeding equipment used in the Czochralski method is as follows: figure 1 As shown, the seeding equipment includes a melt crucible 109, a heater 107 and a heat shield 106, the heater 107 is arranged around the melt crucible 109, and the melt crucible 109 carries a silicon melt 101, The heat shield 106 is disposed above the silicon melt 101 for reflecting heat radiation to the surface of the silicon melt 101 to prevent the heat radiation of the silicon melt 101 from diffusing to the ingot.
[0057] Such as Figure 1 ~ Figure 4 Shown, described Czochralski method seeding method comprises the following steps:
[0058] Such as figure 1 As shown, first carry out step 1), provide a silicon melt 101 and a seed crystal 102, a heat shield 106 is arranged above the silicon melt 101, and the liquid level of the silicon melt 101 is at a position relative to the heat shield 106 The first liquid level position 105 .
[005...
Embodiment 3
[0074] This embodiment provides a Czochralski seeding method, the seeding equipment used in the Czochralski method is as follows: figure 1 As shown, the seeding equipment includes a melt crucible 109, a heater 107 and a heat shield 106, the heater 107 is arranged around the melt crucible 109, and the melt crucible 109 carries a silicon melt 101, The heat shield 106 is disposed above the silicon melt 101 for reflecting heat radiation to the surface of the silicon melt 101 to prevent the heat radiation of the silicon melt 101 from diffusing to the ingot.
[0075] Such as Figure 1 ~ Figure 4 Shown, described Czochralski method seeding method comprises the following steps:
[0076] Such as figure 1 As shown, first carry out step 1), provide a silicon melt 101 and a seed crystal 102, a heat shield 106 is arranged above the silicon melt 101, and the liquid level of the silicon melt 101 is at a position relative to the heat shield 106 The first liquid level position 105 .
[007...
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Abstract
Description
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Application Information
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