Method for regulating detection concentration range and sensitivity of hydrogen detector
A technology of concentration range and detector, which is applied in the field of regulating the concentration range and sensitivity of hydrogen detectors, can solve the problems of no effective method for regulating the detection concentration and sensitivity of hydrogen sensors, and achieve low cost, wide detection range and reliability high effect
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Embodiment 1
[0051] The FTO substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 20 min, dried and fixed on a magnetron sputtering tray. TiO with a purity of 99.99% 2 The target is installed at the cathode target position of the magnetron sputtering system, and the distance between the target and the substrate is adjusted to be 60 mm. When the vacuum degree in the sputtering chamber reaches 6×10 -4 Pa, set the argon and oxygen flow rates to 36sccm and 1sccm respectively, keep the air pressure in the sputtering chamber at 1Pa, set the RF sputtering power to 120W, pre-sputter the target for 10min, then keep the RF power at 120W, During continuous deposition on the FTO substrate for 15 minutes, a layer of TiO was deposited on the FTO substrate 2 The seed layer was taken out from the vacuum chamber, and rapidly annealed at 500° C. for 10 min in an air atmosphere.
[0052] Put the annealed sample against the inner wall of polytetrafluoroethylene in the hy...
Embodiment 2
[0057] Other is the same as embodiment 1, only controls TiO 2 The annealing temperature of the film is 350° C. and the time is 20 min.
[0058] The obtained titanium dioxide thin film hydrogen detector is detected at room temperature, and the resistance variation curve of the obtained titanium dioxide thin film hydrogen detector under different hydrogen concentrations is as follows Figure 4 shown, according to Figure 4 It can be seen that the detection concentration limit of the obtained hydrogen detector can reach 1ppm, the sensitivity is 4%, the sensitivity is 7% at 10ppm, the sensitivity is 15 at 100ppm, and the detection range is 1ppm-20000ppm.
Embodiment 3
[0060] The FTO substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 20 min, dried and fixed on a magnetron sputtering tray. TiO with a purity of 99.99% 2 The target is installed at the cathode target position of the magnetron sputtering system, and the distance between the target and the substrate is adjusted to be 60 mm. When the vacuum degree in the sputtering chamber reaches 10 -4 In Pa order of magnitude, set the argon and oxygen flow rates to 36sccm and 1sccm respectively, keep the pressure in the sputtering chamber at 1Pa, set the RF sputtering power to 120W, pre-sputter the target for 10min, and then keep the RF power at 120W. During continuous deposition on the FTO substrate for 15 minutes, a layer of TiO was deposited on the FTO substrate 2 The seed layer was taken out from the vacuum chamber, and rapidly annealed at 500° C. for 10 min in an air atmosphere. Put the annealed sample against the inner wall of polytetrafluoroethylen...
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