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Memory device, memory and manufacturing method thereof, electronic device and chip

A technology for storage devices and manufacturing methods, which is applied in the field of memory, can solve problems such as the inability to fundamentally improve the storage capacity of DRAM, and achieve the effects of improving storage performance, small leakage current, and small threshold voltage

Inactive Publication Date: 2020-05-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, periodically refreshing memory devices cannot fundamentally improve the storage capacity of DRAM

Method used

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  • Memory device, memory and manufacturing method thereof, electronic device and chip
  • Memory device, memory and manufacturing method thereof, electronic device and chip
  • Memory device, memory and manufacturing method thereof, electronic device and chip

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Embodiment Construction

[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0052] Various schematic views of embodiments of the invention are shown in the drawings, which are not drawn to scale. Therein, certain details have been exaggerated and certain details may have been omitted for the sake of clarity. The shapes of the various regions and layers shown in the figure and their relative sizes and positional relationships are only exemplary, and in practice there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art will According to actual needs, additional regions / layers with different shapes, sizes and relative positions can be designed.

[0053] Hereinafter, the terms "first", "secon...

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Abstract

The invention discloses a memory device, a memory, a manufacturing method of the memory, an electronic device and a chip which relate to the technical field of memories, and aim to prolong the data storage duration of the memory device and improve the storage capacity of the memory device. The memory device includes a substrate, a negative capacitance transistor formed on the substrate, and a capacitor electrically connected to the negative capacitance transistor. The memory comprises the memory device provided by the technical scheme. The memory device provided by the invention is used in theelectronic device.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a memory device, a memory and a manufacturing method thereof, electronic equipment and a chip. Background technique [0002] Dynamic Random Access Memory (DRAM for short) is the most common system memory. It mainly includes storage devices and peripheral circuits. The storage device is the core of DRAM to store data. [0003] For DRAM, memory devices include transistors and capacitors. Transistors are used to control data reading and programming of storage devices, and capacitors are used to store data. At the same time, the DRAM also periodically refreshes the storage device to improve the storage capacity of the storage device. However, periodically refreshing the memory device cannot fundamentally improve the storage capacity of the DRAM. Contents of the invention [0004] The object of the present invention is to provide a storage device, a memory and its manufacturing m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/51H01L27/108H01L21/8242H10B12/00
CPCH01L29/516H10B12/30H10B12/36H10B12/02H10B12/05H10B12/056
Inventor 殷华湘张青竹张兆浩
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI