Nano composite stacked zinc-antimony-germanium-tellurium phase change storage film and preparation method thereof
A nano-composite, phase-change storage technology, applied in the field of microelectronic materials, can solve the problems of insufficient phase transition speed and insufficient thermal stability, and achieve the effects of low density change rate, fast phase transition speed, and good cycle times
Inactive Publication Date: 2020-05-22
JIANGSU UNIV OF TECH
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Problems solved by technology
[0007] The purpose of the present invention is to overcome the defects that the phase change speed of single-layer Zn-Sb phase change material is not fast enough and the thermal stability of Ge-Te phase change material is not high enough. Fabrication of nanocomposite stacked structures by alternating sputtering of Ge-Te with variable speed
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Embodiment 1
[0032] Example 1. Preparation of nanocomposite stacked Zn-Sb / Ge-Te phase-change memory films
[0033] The preparation steps of the phase-change memory film are as follows:
[0034] 1. Clean the surface and back of the quartz substrate to remove dust particles, organic and inorganic impurities:
[0035] (a) Place the substrate in an ethanol solution and clean it ultrasonically for 10 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0036] (b) Place the substrate in an acetone solution and clean it ultrasonically for 10 minutes to remove organic impurities on the surface of the substrate;
[0037] (c) Place the substrate in deionized water, clean it ultrasonically for 10 minutes, and clean the surface again;
[0038](d) Take out the substrate and use high-purity N 2 Blow-dry the surface and back, and place in a drying box for use;
[0039] 2. Preparation of nanocomposite stacked Zn-Sb / Ge-Te phase-change memory films by magnetron sp...
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Abstract
The invention discloses a nano composite stacked zinc-antimony-germanium-tellurium phase change storage film and a preparation method thereof. The total thickness of the storage film is 40-60 nm, andthe structural general formula of the storage film is ZnSb(a) / GeTe(b), wherein a and b represent the thickness of the ZnSb film and the thickness of the GeTe film respectively, and a is greater than 1nm and smaller than 49 nm, and b is greater than 1 nm and smaller than 49 nm. According to the invention, the Zn-Sb material with high crystallization temperature and the Ge-Te material with high phase change speed are alternately sputtered by a magnetron sputtering method to prepare the nano composite stacked phase change storage film, the defects of single-layer phase change materials are overcome, the nano-composite multi-layer Zn-Sb / Ge-Te phase change storage thin film obtained after advantage complementation has the advantages of being high in thermal stability and phase change speed, and the phase change performance can be further regulated and controlled through parameters such as the thickness ratio and the stacking sequence of Zn-Sb and Ge-Te.
Description
technical field [0001] The invention relates to the technical field of microelectronic materials, in particular to a nano-composite stacked zinc-antimony-germanium-tellurium phase-change memory film for phase-change memory and a preparation method thereof. Background technique [0002] The storage principle of phase change memory (PCRAM) is to store information based on the atomic structure of matter, which is fundamentally different from traditional DRAM, FLASH and other charges-based memories. PCRAM is a storage technology that is not limited by the reduction of the process node. On the contrary, with the reduction of the process node and the improvement of the process level, the potential performance of PCRAM can be better highlighted. In the situation where memories such as DRAM and Flash encounter bottlenecks due to scaling of CMOS process nodes (Scaling), PCRAM is expected to become one of the most competitive storage technologies under the situation of future process ...
Claims
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IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/881H10N70/8828H10N70/026H10N70/011
Inventor 吴卫华朱小芹张勇
Owner JIANGSU UNIV OF TECH