Target production method

Abstract

A method for manufacturing a target, comprising: providing a copper-aluminum alloy ingot; performing at least two first forging processes on the ingot; and performing a second forging process on the ingot after each first forging process. A heat treatment process; rolling the ingot after forging and heat treatment; performing a heat processing process on the rolled ingot. The multiple forging process and heat treatment process make the grain structure inside the ingot fine, so that the toughness of the material is greatly enhanced, and the ingot is rolled to make the internal structure of the ingot uniform and reach the thickness of the required target material , and then the copper-aluminum alloy target is manufactured through the thermal processing process, and the internal grain size of the target is adjusted by the thermal processing process parameters.

Description

technical field [0001] The invention relates to the field of semiconductor sputtering target material preparation, and particularly designs a target material manufacturing method. Background technique [0002] The sputtering target is an extremely important key material necessary for the manufacture of semiconductor chips. The principle is to use PVD (Physical Vapor Deposition Technology) to bombard the target with high-pressure accelerated gaseous ions, so that the atoms of the target are sputtered out to It is deposited on the silicon wafer in the form of a thin film, which eventually forms the complex wiring structure in the semiconductor chip. Sputtering targets have many advantages such as uniformity and controllability of metal coatings, and are widely used in the semiconductor field. The quality of PVD film mainly depends on the purity, microstructure and other factors of the sputtering target. With the rapid development of the semiconductor industry, the demand for...

AI Technical Summary

Problems solved by technology

[0005] The problem solved by the present invention is that the size of the internal crystal grains of the copper-aluminum alloy sputtering target cannot be well controlled when making the copper-aluminum alloy target.

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